Non-Inverter Buffer. TC7SH34FE Datasheet

TC7SH34FE Buffer. Datasheet pdf. Equivalent


Toshiba TC7SH34FE
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic
TC7SH34FE
TC7SH34FE
Non-Inverter Buffer
Features
High speed operation : tpd = 3.8ns (typ.) at VCC = 5V, 15pF
Low power dissipation : ICC = 2μA (max) at Ta = 25°C
High noise immunity : VNIH = VNIL = 28% VCC (min)
5.5-V tolerant input.
Wide operating voltage range: VCC = 2 to 5.5 V
Weight: 0.003 g (typ.)
(ESV)
Marking
HF
Product name
Pin Assignment (top view)
NC 1
IN A 2
5 VCC
GND 3
4 OUT Y
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Supply voltage range
DC input voltage
DC output voltage
Input diode current
Output diode current
DC output current
DC VCC/ground current
Power dissipation
Storage temperature
VCC
VIN
VOUT
IIK
IOK
IOUT
ICC
PD
Tstg
0.5 to 7
V
0.5 to 7
V
0.5 to VCC + 0.5
V
20
mA
± 20
(Note1) mA
± 25
mA
± 50
mA
150
mW
65 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Note 1: VOUT < GND, VOUT > VCC
Start of commercial production
2004-04
1
2014-03-01


TC7SH34FE Datasheet
Recommendation TC7SH34FE Datasheet
Part TC7SH34FE
Description Non-Inverter Buffer
Feature TC7SH34FE; TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7SH34FE TC7SH34FE Non-Inverter Buffer.
Manufacture Toshiba
Datasheet
Download TC7SH34FE Datasheet




Toshiba TC7SH34FE
IEC Logic Symbol
IN A
=1
Operating Ranges
Characteristics
Supply voltage
Input voltage
Output voltage
Operating temperature
Input rise and fall time
OUT Y
Truth Table
A
Y
L
L
H
H
TC7SH34FE
Symbol
VCC
VIN
VOUT
Topr
dt/dv
Rating
2 to 5.5
0 to 5.5
0 to VCC
40 to 85
0 to 100 ( VCC = 3.3 V ± 0.3 V )
0 to 20 ( VCC = 5.0 V ± 0.5 V )
Unit
V
V
V
°C
ns/V
2
2014-03-01



Toshiba TC7SH34FE
TC7SH34FE
Electrical Characteristics
DC Characteristics
Characteristics
High-level input
voltage
Low-level input
voltage
High-level output
voltage
Low-level output
voltage
Input leakage
current
Quiescent supply
current
Symbol
Test Condition
VCC (V)
Ta = 25°C
Ta = −40 to 85°C
Unit
Min Typ. Max Min Max
2.0
1.5
1.5
VIH
3.0 to 5.5
VCC
× 0.7
VCC
× 0.7
V
2.0
0.5
0.5
VIL
3.0 to 5.5
VCC
× 0.3
VCC
× 0.3
2.0
1.9
2.0
1.9
IOH = −50 μA
3.0
2.9
3.0
2.9
VOH VIN = VIH
4.5
4.4
4.5
4.4
IOH = −4 mA
3.0
2.58
2.48
IOH = −8 mA
4.5
3.94
3.80
V
2.0
0
0.1
0.1
IOL = 50 μA
3.0
0
0.1
0.1
VOL VIN = VIL
4.5
0
0.1
0.1
IOL = 4 mA
3.0
0.36
0.44
IOL = 8 mA
4.5
0.36
0.44
IIN VIN = 5.5 V or GND
0 to 5.5
± 0.1
± 1.0 μA
ICC VIN = VCC or GND
5.5
2.0
20.0 μA
3
2014-03-01







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