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TC7SZ86FU Dataheets PDF



Part Number TC7SZ86FU
Manufacturers Toshiba
Logo Toshiba
Description 2-Input Exclusive-OR Gate
Datasheet TC7SZ86FU DatasheetTC7SZ86FU Datasheet (PDF)

CMOS Digital Integrated Circuits Silicon Monolithic TC7SZ86FU TC7SZ86FU 1. Functional Description • 2-Input Exclusive-OR Gate 2. Features (1) AEC-Q100 (Rev. H) (Note 1) (2) Wide operating temperature range: Topr = -40 to 125  (Note 2) (3) High output current: ±24 mA (min) at VCC = 3.0 V (4) Super high speed operation: tpd = 2.9 ns (typ.) at VCC = 5.0 V, CL = 50 pF (5) Operation voltage range: VCC = 1.65 to 5.5 V (6) 5.5 V tolerant inputs (7) 5.5 V power down protection output (8) Matches the .

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CMOS Digital Integrated Circuits Silicon Monolithic TC7SZ86FU TC7SZ86FU 1. Functional Description • 2-Input Exclusive-OR Gate 2. Features (1) AEC-Q100 (Rev. H) (Note 1) (2) Wide operating temperature range: Topr = -40 to 125  (Note 2) (3) High output current: ±24 mA (min) at VCC = 3.0 V (4) Super high speed operation: tpd = 2.9 ns (typ.) at VCC = 5.0 V, CL = 50 pF (5) Operation voltage range: VCC = 1.65 to 5.5 V (6) 5.5 V tolerant inputs (7) 5.5 V power down protection output (8) Matches the performance of TC74LCX series when operated at 3.3 V VCC Note 1: This device is compliant with the reliability requirements of AEC-Q100. For details, contact your Toshiba sales representative. Note 2: For devices with the ordering part number ending in J(CT. Topr = -40 to 85  for the other devices. 3. Packaging USV ©2015 Toshiba Corporation 1 Start of commercial production 2002-06 2017-05-17 Rev.2.0 4. Marking and Pin Assignment TC7SZ86FU Marking 5. IEC Logic Symbol Pin Assignment (Top view) 6. Truth Table A B Y L L L L H H H L H H H L 7. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Note Rating Unit Supply voltage VCC -0.5 to 6.0 V Input voltage VIN -0.5 to 6.0 V DC output voltage VOUT (Note 1) -0.5 to 6.0 V (Note 2) -0.5 to VCC + 0.5 Input diode current IIK -20 mA Output diode current IOK (Note 3) -20 mA DC output current IOUT ±50 mA VCC/ground current ICC ±50 mA Power dissipation PD 200 mW Storage temperature Tstg -65 to 150  Note: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or even destruction. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: VCC = 0 V Note 2: High (H) or Low (L) state. IOUT absolute maximum rating must be observed. Note 3: VOUT < GND ©2015 Toshiba Corporation 2 2017-05-17 Rev.2.0 8. Operating Ranges (Note) TC7SZ86FU Characteristics Symbol Note Test Condition Rating Unit Supply voltage VCC  (Note 1)  1.65 to 5.5 V 1.5 to 5.5 Input voltage VIN  0 to 5.5 V Output voltage VOUT (Note 2)  (Note 3)  0 to 5.5 V 0 to VCC Operating temperature Topr (Note 4)  -40 to 125  (Note 5)  -40 to 85 Input rise and fall time dt/dv VCC = 1.8 ± 0.15 V, 2.5 ± 0.2 V 0 to 20 ns/V VCC = 3.3 ± 0.3 V 0 to 10 VCC = 5.0 ± 0.5 V 0 to 5 Note: The operating ranges must be maintained to ensure the normal operation of the device. Unused inputs must be tied to either VCC or GND. Note 1: Data retention only Note 2: VCC = 0 V Note 3: High (H) or Low (L) state. Note 4: For devices with the ordering part number ending in J(CT. Note 5: For devices except those with the ordering part number ending in J(CT. 9. Electrical Characteristics 9.1. DC Characteristics (Unless otherwise specified, Ta = 25 ) Characteristics High-level input voltage Low-level input voltage High-level output voltage Low-level output voltage Input leakage current Power-OFF leakage current Quiescent supply current Symbol Test Condition VCC (V) Min VIH  VIL  1.65 to 1.95 VCC × 0.75 2.3 to 5.5 VCC × 0.7 1.65 to 1.95  2.3 to 5.5  VOH VIN = VIH or VIL IOH = -100 µA 1.65 2.3 1.55 2.2 3.0 2.9 4.5 4.4 IOH = -8 mA 2.3 1.9 IOH = -16 mA 3.0 2.4 IOH = -24 mA 3.0 2.3 IOH = -32 mA 4.5 3.8 VOL VIN = VIH or VIL IOL = 100 µA 1.65  2.3  3.0  4.5  IOL = 8 mA 2.3  IOL = 16 mA 3.0  IOL = 24 mA 3.0  IOL = 32 mA 4.5  IIN VIN = 5.5 V or GND 0 to 5.5  IOFF VIN or VOUT = 5.5 V 0  Typ.     1.65 2.3 3.0 4.5 2.15 2.8 2.68 4.2 0.0 0.0 0.0 0.0 0.1 0.15 0.22 0.22   Max Unit  V  VCC × 0.25 V VCC × 0.3  V        0.1 V 0.1 0.1 0.1 0.3 0.4 0.55 0.55 ±1 µA 1 µA ICC VIN = VCC or GND 5.5   2 µA ©2015 Toshiba Corporation 3 2017-05-17 Rev.2.0 TC7SZ86FU 9.2. DC Characteristics (Unless otherwise specified, Ta = -40 to 85 ) Characteristics High-level input voltage Low-level input voltage High-level output voltage Low-level output voltage Input leakage current Power-OFF leakage current Quiescent supply current Symbol Test Condition VCC (V) Min Max Unit VIH  VIL  VOH VIN = VIH or VIL 1.65 to 1.95 VCC × 0.75  V 2.3 to 5.5 VCC × 0.7.


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