Document
TC7WB66CFK/L8X,TC7WB67CFK/L8X
CMOS Digital Integrated Circuits Silicon Monolithic
TC7WB66CFK,TC7WB66CL8X TC7WB67CFK,TC7WB67CL8X
1. Functional Description
• Dual SPST Bus Switch
2. General
The TC7WB66CFK/L8X and TC7WB67CFK/L8X are low ON-resistance, high-speed CMOS 2-bit bus switches. These bus switches allow connections or disconnections to be made with minimal propagation delay while maintaining Low power dissipation which is the feature of CMOS. TC7WB66CFK/L8X requires the output enable (OE) input to be set low to place the output into the high impedance state,whereas the TC7WB67CFK/L8X requires the output enable (OE) input to be set high to place the output into the high impedance. These Bus switches consist of P-MOS and N-MOS structure, meaning these devices are suitable for analog signal transmission. All inputs are equipped with protector circuits to protect the device from static discharge.
3. Features
(1) Operating voltage: VCC = 1.65 to 5.5 V (2) ON capacitance: CI/O = 10 pF Switch On (typ.) @VCC = 5.0 V (3) ON resistance: RON = 4 Ω (typ.) @VCC = 4.5 V, VIS = 0 V (4) ESD performance: Machine model ≥ ±200 V, Human body model ≥ ±2000 V (5) Package: US8, MP8
4. Packaging
TC7WB66CFK,TC7WB67CFK
TC7WB66CL8X,TC7WB67CL8X
US8
©2015-2018 Toshiba Electronic Devices & Storage Corporation
1
MP8
Start of commercial production
2012-10 2018-10-22
Rev.4.0
5. Pin Assignment
TC7WB66CFK
TC7WB66CFK/L8X,TC7WB67CFK/L8X
TC7WB67CFK
TC7WB66CL8X
TC7WB67CL8X
6. Marking
TC7WB66CFK
TC7WB66CL8X
TC7WB67CFK TC7WB67CL8X
©2015-2018 Toshiba Electronic Devices & Storage Corporation
2
2018-10-22 Rev.4.0
7. Block Diagram
TC7WB66CFK,TC7WB66CL8X
TC7WB66CFK/L8X,TC7WB67CFK/L8X
TC7WB67CFK,TC7WB67CL8X
8. Principle of Operation 8.1. Truth Table
Inputs OE (TC7WB66CFK/L8X)
H
L
Inputs OE (TC7WB67CFK/L8X)
L
H
9. Absolute Maximum Ratings (Note)
Function
A port = B port Disconnect
Characteristics
Part Number
Symbol Note
Rating
Unit
Supply voltage Input voltage (OE, OE) Switch I/O voltage Clamp diode current Switch I/O current Power dissipation
VCC
-0.5 to 7.0
V
VIN
-0.5 to 7.0
VS
-0.5 to VCC +0.5
IIK
-50
mA
IS
50
TC7WB66CFK,TC7WB67CFK
PD
200
mW
TC7WB66CL8X,TC7WB67CL8X
(Note 1)
300
VCC/ground current Storage temperature
ICC/IGND Tstg
±100
mA
-65 to 150
Note: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or even destruction. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliab.