TC7WH00FC

TC7WH00FC TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7WH00FC Dual 2-Input NAND Gate Features High speed operation Low power dissipation High noise immunity Operating voltage range 5.5-V tolerant inputs : tpd = 3.7ns (typ.) at VCC = 5 V, CL = 15pF : ICC = 2μA (max) at Ta = 25°C : VNIH = VNIL = 28% VCC (min) : VCC = 2 to 5.5 V TC7WH00FC Weight: 0.002 g (typ.) (CST8) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Supply voltage DC input voltage DC output voltage Input diode current Output diode current DC output current DC VCC/GND current Power dissipation Storage temperature VCC VIN VOUT IIK IOK IOUT ICC PD Tstg −0.5 to 7.0 V −0.5 to 7.0 V −0.5 to VCC + 0.5 (Note1) V −20 mA ±20 (Note2) mA ±25 mA ±50 mA 150 (Note3) mW −65 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1:High or Low State. IOUT absolute maximum rating...