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TC7WH17FU

Toshiba

Triple Schmitt Buffer

CMOS Digital Integrated Circuits Silicon Monolithic TC7WH17FU TC7WH17FU 1. Functional Description • Triple Schmitt Buf...


Toshiba

TC7WH17FU

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Description
CMOS Digital Integrated Circuits Silicon Monolithic TC7WH17FU TC7WH17FU 1. Functional Description Triple Schmitt Buffer 2. Features (1) Wide operating temperature range: Topr = -40 to 125  (Note 1) (2) High speed operation: tpd = 5.5 ns (typ.) (VCC = 5.0 V, CL = 15 pF) (3) Low power dissipation: ICC = 2.0 µA (max) (Ta = 25 ) (4) Wide operating voltage range: VCC = 2.0 to 5.5 V (5) High noise immunity: VNIH = VNIL = 28 % VCC (min) (6) Balanced propagation delays: tPLH ≈ tPHL (7) 5.5 V tolerant inputs Note 1: For devices with the ordering part number ending in J(CT. Topr = -40 to 85  for the other devices. 3. Packaging SM8 ©2016-2020 Toshiba Electronic Devices & Storage Corporation 1 Start of commercial production 2020-01 2020-02-04 Rev.4.0 4. Marking and Pin Assignment TC7WH17FU Marking 5. IEC Logic Symbol Pin Assignment (Top view) 6. Truth Table A Y L L H H 7. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Note Rating Unit Supply voltage VCC -0.5 to 7.0 V Input voltage VIN -0.5 to 7.0 DC output voltage VOUT -0.5 to VCC + 0.5 Input diode current IIK -20 mA Output diode current IOK (Note 1) ±20 DC output current IOUT ±25 VCC/ground current ICC ±50 Power dissipation PD 300 mW Storage temperature Tstg -65 to 150  Note: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or even destruction. Using continuously under heavy lo...




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