Triple Schmitt Buffer
CMOS Digital Integrated Circuits Silicon Monolithic
TC7WH17FU
TC7WH17FU
1. Functional Description
• Triple Schmitt Buf...
Description
CMOS Digital Integrated Circuits Silicon Monolithic
TC7WH17FU
TC7WH17FU
1. Functional Description
Triple Schmitt Buffer
2. Features
(1) Wide operating temperature range: Topr = -40 to 125 (Note 1) (2) High speed operation: tpd = 5.5 ns (typ.) (VCC = 5.0 V, CL = 15 pF) (3) Low power dissipation: ICC = 2.0 µA (max) (Ta = 25 ) (4) Wide operating voltage range: VCC = 2.0 to 5.5 V (5) High noise immunity: VNIH = VNIL = 28 % VCC (min) (6) Balanced propagation delays: tPLH ≈ tPHL (7) 5.5 V tolerant inputs
Note 1: For devices with the ordering part number ending in J(CT. Topr = -40 to 85 for the other devices.
3. Packaging
SM8
©2016-2020 Toshiba Electronic Devices & Storage Corporation
1
Start of commercial production
2020-01
2020-02-04 Rev.4.0
4. Marking and Pin Assignment
TC7WH17FU
Marking
5. IEC Logic Symbol
Pin Assignment (Top view)
6. Truth Table
A
Y
L
L
H
H
7. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )
Characteristics
Symbol
Note
Rating
Unit
Supply voltage
VCC
-0.5 to 7.0
V
Input voltage
VIN
-0.5 to 7.0
DC output voltage
VOUT
-0.5 to VCC + 0.5
Input diode current
IIK
-20
mA
Output diode current
IOK
(Note 1)
±20
DC output current
IOUT
±25
VCC/ground current
ICC
±50
Power dissipation
PD
300
mW
Storage temperature
Tstg
-65 to 150
Note: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or even destruction. Using continuously under heavy lo...
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