BC848BLT1G

DATA SHEET www.onsemi.com General Purpose Transistors NPN Silicon BC846ALT1G Series Features Moisture Sensitivity Level: 1 ESD Rating − Human Body Model: > 4000 V ESD Rating − Machine Model: > 400 V S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO Vdc BC846 65 BC847, BC850 45 BC848, BC849 30 Collector−Base Voltage VCBO Vdc BC846 80 BC847, BC850 50 BC848, BC849 30 Emitter−Base Voltage VEBO Vdc BC846 6.0 BC847, BC850 6.0 BC848, BC849 5.0 Collector Current − Continuous IC 100 mAdc Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Symbol Total Device Dissipation FR− 5 Board, PD (Note 1) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient (Note 1) RqJA Total Device Dissipation PD Alumina Substrate (Note 2) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient (Note 2) RqJA Junction and Storage Temperature Range TJ, Tstg 1. FR− 5 = 1.0  0.75  0.062 in. 2. Alumina = 0.4  0.3  0.024 in 99.5% alumina. Max 225 1.8 556 300 2.4 417 −55 to +150 Unit mW mW/...