Bus Buffer. TC7WZ126FK Datasheet

TC7WZ126FK Buffer. Datasheet pdf. Equivalent


Toshiba TC7WZ126FK
CMOS Digital Integrated Circuits Silicon Monolithic
TC7WZ126FK
TC7WZ126FK
1. Functional Description
• Dual Bus Buffer with 3-State Output
2. Features
(1) AEC-Q100 (Rev. H) (Note 1)
(2) Wide operating temperature range: Topr = -40 to 125 (Note 2)
(3) High output current: ±24 mA (min) at VCC = 3.0 V
(4) Super high speed operation: tpd = 2.6 ns (typ.) at VCC = 5.0 V, CL = 50 pF
(5) Operation voltage range: VCC = 1.65 to 5.5 V
(6) 5.5 V tolerant inputs
(7) 5.5 V power down protection output
(8) Matches the performance of TC74LCX series when operated at 3.3 V VCC
Note 1: This device is compliant with the reliability requirements of AEC-Q100. For details, contact your Toshiba sales
representative.
Note 2: For devices with the ordering part number ending in J(CT. Topr = -40 to 85 for the other devices.
3. Packaging
US8
©2016 Toshiba Corporation
1
Start of commercial production
2009-09
2017-05-19
Rev.3.0


TC7WZ126FK Datasheet
Recommendation TC7WZ126FK Datasheet
Part TC7WZ126FK
Description Dual Bus Buffer
Feature TC7WZ126FK; CMOS Digital Integrated Circuits Silicon Monolithic TC7WZ126FK TC7WZ126FK 1. Functional Descriptio.
Manufacture Toshiba
Datasheet
Download TC7WZ126FK Datasheet




Toshiba TC7WZ126FK
4. Marking and Pin Assignment
TC7WZ126FK
Marking
5. IEC Logic Symbol
Pin Assignment (Top view)
6. Truth Table
Input
A
Input
G
X
L
L
H
H
H
X: Don't care
Z: High impedance
Output
Y
Z
L
H
7. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )
Characteristics
Symbol
Note
Rating
Unit
Supply voltage
VCC
-0.5 to 6.0
V
Input voltage
VIN
-0.5 to 6.0
V
DC output voltage
VOUT
(Note 1)
-0.5 to 6.0
V
(Note 2)
-0.5 to VCC + 0.5
Input diode current
IIK
-20
mA
Output diode current
IOK
(Note 3)
-20
mA
DC output current
IOUT
±50
mA
VCC/ground current
ICC
±50
mA
Power dissipation
PD
200
mW
Storage temperature
Tstg
-65 to 150
Note: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or even
destruction.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Note 1: VCC = 0 V or high impedance condition
Note 2: High (H) or Low (L) state. IOUT absolute maximum rating must be observed.
Note 3: VOUT < GND
©2016 Toshiba Corporation
2
2017-05-19
Rev.3.0



Toshiba TC7WZ126FK
8. Operating Ranges (Note)
TC7WZ126FK
Characteristics
Symbol
Note
Test Condition
Rating
Unit
Supply voltage
VCC
(Note 1)
1.65 to 5.5
V
1.5 to 5.5
Input voltage
VIN
0 to 5.5
V
Output voltage
VOUT
(Note 2)
(Note 3)
0 to 5.5
V
0 to VCC
Operating temperature
Topr
(Note 4)
-40 to 125
(Note 5)
-40 to 85
Input rise and fall time
dt/dv
VCC = 1.8 ± 0.15 V, 2.5 ± 0.2 V
0 to 20
ns/V
VCC = 3.3 ± 0.3 V
0 to 10
VCC = 5.0 ± 0.5 V
0 to 5
Note: The operating ranges must be maintained to ensure the normal operation of the device.
Unused inputs must be tied to either VCC or GND.
Note 1: Data retention only
Note 2: VCC = 0 V or high impedance condition
Note 3: High (H) or Low (L) state.
Note 4: For devices with the ordering part number ending in J(CT.
Note 5: For devices except those with the ordering part number ending in J(CT.
9. Electrical Characteristics
9.1. DC Characteristics (Unless otherwise specified, Ta = 25 )
Characteristics
Symbol
Test Condition
VCC (V)
Min
Typ.
Max Unit
High-level input voltage
Low-level input voltage
High-level output voltage
Low-level output voltage
Input leakage current
3-state output OFF-state
leakage current
Power-OFF leakage
current
Quiescent supply current
VIH
VIL
VOH VIN = VIH
1.65 to 1.95 VCC × 0.75
V
2.3 to 5.5 VCC × 0.70
1.65 to 1.95
VCC × 0.25 V
2.3 to 5.5
VCC × 0.30
IOH = -100 µA
1.65
1.55
1.65
V
2.3
2.2
2.3
3.0
2.9
3.0
4.5
4.4
4.5
VOL VIN = VIH or VIL
IOH = -4 mA
IOH = -8 mA
IOH = -16 mA
IOH = -24 mA
IOH = -32 mA
IOL = 100 µA
1.65
2.3
3.0
3.0
4.5
1.65
2.3
1.29
1.52
1.9
2.15
2.4
2.8
2.3
2.68
3.8
4.2
0.0
0.1
V
0.0
0.1
3.0
0.0
0.1
4.5
0.0
0.1
IOL = 4 mA
1.65
IOL = 8 mA
2.3
IOL = 16 mA
3.0
IOL = 24 mA
3.0
IOL = 32 mA
4.5
IIN VIN = 5.5 V or GND
0 to 5.5
IOZ VIN = VIH or VIL
VOUT = 0 to 5.5 V
1.65 to 5.5
IOFF VIN or VOUT = 5.5 V
0
0.08
0.24
0.1
0.3
0.15
0.4
0.22
0.55
0.22
0.55
±1
µA
±1
µA
1
µA
ICC VIN = 5.5 V or GND
1.65 to 5.5
1
µA
©2016 Toshiba Corporation
3
2017-05-19
Rev.3.0







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