Bus Transceiver. TC7WZ245FK Datasheet

TC7WZ245FK Transceiver. Datasheet pdf. Equivalent

TC7WZ245FK Datasheet
Recommendation TC7WZ245FK Datasheet
Part TC7WZ245FK
Description Dual Bus Transceiver
Feature TC7WZ245FK; TC7WZ245FU/FK TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7WZ245FU, TC7WZ245FK Dua.
Manufacture Toshiba
Datasheet
Download TC7WZ245FK Datasheet




Toshiba TC7WZ245FK
TC7WZ245FU/FK
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic
TC7WZ245FU, TC7WZ245FK
Dual Bus Transceiver
Features
High output current
: ±24mA (min) at VCC = 3V
Super high speed operation : tpd = 5.0ns (max)
at VCC = 5V, 50 pF
Operation voltage range : VCC (opr) = 1.65 to 5.5V
5.5-V tolerant inputs
5.5-V power down protection outputs
Matches the performance of TC74LCX series when operated at
3.3-V VCC
Note: Do not apply a signal to any pins when it is the output
mode. Damage may result.
All floating (high impedance) bus pins must have their input
levels fixed by means of pull-up or pull-down resistors.
Marking
SM8
Type name
US8
TC7WZ245FU
TC7WZ245FK
(SM8)
(US8)
Z 245
Lot No.
WZ
245
Weight
SSOP8-P-0.65 : 0.02 g (typ.)
SSOP8-P-0.50A : 0.01 g (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Pin Assignment (top view)
Characteristics
Symbol
Rating
Unit
Supply voltage range
DC input voltage
DC output voltage
Input diode current
Output diode current
DC output current
DC VCC/ground current
Power dissipation
VCC
VIN
VOUT
IIK
IOK
IOUT
ICC
PD
0.5 to 6
V
0.5 to 6
V
0.5 to 6 (Note 1)
V
0.5 to VCC+0.5 (Note 2)
20
mA
20 (Note 3) mA
±50
mA
±50
mA
300 (SM8)
mW
200 (US8)
DIR 1
A1 2
A2 3
GND 4
8 VCC
7G
6 B1
5 B2
Storage temperature
Lead temperature (10 s)
Tstg
65 to 150
°C
TL
260
°C
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: VCC = 0V or High impedance condition
Note 2: High or Low state. Do not exceed IOUT of absolute maximum ratings.
Note 3: VOUT < GND
Start of commercial production
2003-07
1
2014-03-01



Toshiba TC7WZ245FK
Truth Table
TC7WZ245FU/FK
INPUT
G
DIR
L
L
L
H
H
X
FUNCTION
A BUS
B BUS
OUTPUT
OUTPUT
INPUT
A=B
INPUT
OTPUT
B=A
High Impedance
Z
X: Don't Care
Z: High Impedance
Operating Ranges
Characteristics
Supply voltage
Input voltage
Output voltage
Operating temperature
Input rise and fall time
Symbol
VCC
VIN
VOUT
Topr
dt/dv
Note 4: Data retention only
Note 5: VCC = 0 V or High impedance condition
Note 6: High or low state
Rating
Unit
1.65 to 5.5
1.5 to 5.5
(Note 4)
0 to 5.5
0 to 5.5
(Note 5)
0 to VCC
40 to 85
(Note 6)
0 to 20 ( VCC = 1.80 V ± 0.15 V,
2.5 V ± 0.2 V )
0 to 10 ( VCC = 3.3 V ± 0.3 V )
0 to 5 ( VCC = 5.0 V ± 0.5 V )
V
V
V
°C
ns/V
2
2014-03-01



Toshiba TC7WZ245FK
TC7WZ245FU/FK
Electrical Characteristics
DC Characteristics
Characteristics
Symbol
High-Level
Input Voltage
VIH
Low-Level
Input Voltage
VIL
Test Condition
VCC (V)
Ta = 25°C
Ta = −40 to 85°C
Unit
Min Typ. Max Min Max
1.65 to 1.95 VCC
× 0.75
VCC
× 0.75
2.3 to 5.5
VCC
× 0.7
1.65 to 1.95
VCC
× 0.7
V
VCC
VCC
× 0.25
× 0.25
2.3 to 5.5
VCC
VCC
× 0.3
× 0.3
IOH = -100 μA
High-level output voltage
VOH
VIN
= VIH or VIL
IOH = −4 mA
IOH = −8 mA
IOH = −16 mA
IOH = −24 mA
IOH = −32 mA
1.65
2.3
3.0
4.5
1.65
2.3
3.0
3.0
4.5
1.65
1.55 1.65
1.55
2.2
2.3
2.2
2.9
3.0
2.9
4.4
4.5
4.4
1.29 1.52
1.29
1.9 2.14
1.9
2.4 2.75
2.4
2.3 2.62
2.3
3.8 4.13
3.8
V
0
0.1
0.1
2.3
IOH = 100 μA
3.0
0
0.1
0.1
0
0.1
0.1
Low-level output voltage
VOL
VIN
= VIH or VIL
IOH = 4 mA
IOH = 8 mA
4.5
0
0.1
0.1
1.65
0.08 0.24
0.24
2.3
0.1
0.3
0.3
IOH = 16 mA
3.0
0.16 0.4
0.4
IOH = 24 mA
3.0
0.24 0.55
0.55
IOH = 32 mA
4.5
0.25 0.55
0.55
Input leakage current
IIN VIN = 5.5 V or GND
0 to 5.5
±1
±10 μA
3-State Output
Off-State Current
IOZ
VIN = VIH or VIL
VOUT = VCC or GND
1.65 to 5.5
⎯ ±0.5
±5
μA
Power off leakage
current
IOFF VIN or VOUT = 5.5 V
0.0
1
10
μA
Quiescent supply current ICC VIN = 5.5 V or GND
1.65 to 5.5
1
10
μA
3
2014-03-01







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