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ST13007A Dataheets PDF



Part Number ST13007A
Manufacturers ST Microelectronics
Logo ST Microelectronics
Description High voltage fast-switching NPN power transistor
Datasheet ST13007A DatasheetST13007A Datasheet (PDF)

ST13007 High voltage fast-switching NPN power transistor Features ■ DC current gain classification ■ High voltage capability ■ Low spread of dynamic parameters ■ Very high switching speed Applications ■ Electronic ballast for fluorescent lighting ■ Switch mode power supplies Description The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance.

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ST13007 High voltage fast-switching NPN power transistor Features ■ DC current gain classification ■ High voltage capability ■ Low spread of dynamic parameters ■ Very high switching speed Applications ■ Electronic ballast for fluorescent lighting ■ Switch mode power supplies Description The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. TAB 3 2 1 TO-220 Figure 1. Internal schematic diagram Table 1. Device summary Order code Marking (1) Package Packaging ST13007 ST13007A ST13007B TO-220 Tube 1. The product is classified in DC current gain group A and group B, see Table 5: hFE classification. STMicroelectronics reserves the right to ship from any group according to production availability. December 2009 Doc ID 5263 Rev 4 1/11 www.st.com 11 Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter VCES VCEO VEBO IC ICM IB IBM PTOT TSTG TJ Collector-emitter voltage (VBE = 0) Collector-emitter voltage (IB = 0) Emitter-base voltage (IC = 0) Collector current Collector peak current (tP < 5 ms) Base current Base peak current (tP < 5 ms) Total dissipation at Tc = 25 °C Storage temperature Max. operating junction temperature Table 3. Thermal data Symbol Parameter RthJC Thermal resistance junction-case __max ST13007 Value Unit 700 V 400 V 9 V 8 A 16 A 4 A 8 A 80 W - 65 to 150 °C 150 °C Value 1.56 Unit °C/W 2/11 Doc ID 5263 Rev 4 ST13007 2 Electrical characteristics Electrical characteristics Tcase = 25 °C unless otherwise specified. Table 4. Electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit ICES Collector cut-off current VCE = 700 V (VBE = 0) VCE = 700 V TC = 125 °C 10 µA 0.5 mA IEBO Emitter cut-off current (IC = 0) VEB = 9 V 100 µA Collector-emitter VCEO(sus) (1) sustaining voltage (IB = 0) IC = 10 mA 400 V VCE(sat) (1) Collector-emitter saturation voltage IC = 2 A IB = 0.4 A IC = 5 A _ IB = 1 A IC = 8 A _ _ IB = 2 A IC = 5 A, IB = 1 A, TC = 100 °C 1 V 2 V 3 V 3 V VBE(sat) (1) Base-emitter saturation voltage IC = 2 A IC = 5 A _ IB = 0.4 A IB = 1 A IC = 5 A, IB = 1 A, TC = 100°C 1.2 V 1.6 V 1.5 V hFE DC current gain IC = 2 A IC = 5 A VCE = 5 V 16 VCE = 5 V 5 40 30 Resistive load ts Storage time tf Fall time VCC = 300 V IC = 2 A IB(on) = - IB(off) = 400 mA 3 TP = 30 µs 4.5 µs 350 ns Inductive load ts Storage time tf Fall time IC = 5 A IB(on) = 1 A L = 200 µH VClamp = 250 V IB(off) = - 2 A 1.5 2.5 µs 40 110 ns Inductive load IC = 5 A VClamp = 250 V ts Storage time IB(on) = 1 A IB(off) = - 2 A 2 µs tf Fall time L = 200 µH TC = 125 °C 70 ns 1. Pulse test: pulse duration ≤ 300 µs, duty cycle ≤ 2 % Table 5. hFE classification Symbol Parameter DC current gain hFE IC = 2 A, VCE = 5 V Group Min. Max. Unit A 16 30 B 26 40 Doc ID 5263 Rev 4 3/11 Electrical characteristics 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Derating curve ST13007 Figure 4. DC current gain (VCE = 2 V) Figure 5. DC current gain (VCE = 5 V) Figure 6. Collector-emitter saturation Figure 7. Base-emitter saturation voltage voltage 4/11 Doc ID 5263 Rev 4 ST13007 Figure 8. Inductive fall time Electrical characteristics Figure 9. Inductive storage time Figure 10. Reverse biased SOA Doc ID 5263 Rev 4 5/11 Electrical characteristics 2.2 Test circuits Figure 11. Resistive load switching test circuit ST13007 1. Fast electronic switch 2. Non-inductive resistor Figure 12. Inductive load switching test circuit 1. Fast electronic switch 2. Non-inductive resistor 3. Fast recovery rectifier 6/11 Doc ID 5263 Rev 4 ST13007 3 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. Doc ID 5263 Rev 4 7/11 Package mechanical data TO-220 type A mechanical data mm Dim Min Typ A 4.40 b 0.61 b1 1.14 c 0.48 D 15.25 D1 1.27 E 10 e 2.40 e1 4.95 F 1.23 H1 6.20 J1 2.40 L 13 L1 3.50 L20 16.40 L30 28.90 ∅P 3.75 Q 2.65 ST13007 Max 4.60 0.88 1.70 0.70 15.75 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 3.85 2.95 8/11 Doc ID 5263 Rev 4 0015988_Rev_S ST13007 Package mechanical data DIM. A b b1 c D E e e1 F H1 J1 L L1 L20 øP Q TO-220 type E mechanical data MIN. 4.47 0.70 1.17 0.31 14.60 9.96 4.98 1.17 6.10 2.52 12.70 3.20 15.21 3.73 2.59 mm. TYP 2.54 5.08 MAX. 4.67 0.91 1.37 0.53 15.70 10.36 5.18 1.37 6.80 2.82 13.80 3.96 16.77 3.94 2.89 Doc ID 52.


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