MJE4343

MJE4343 (NPN), MJE4353 (PNP) High-Voltage - High Power Transistors . . . designed for use in high power audio amplifier applications and high voltage switching regulator circuits. Features High Collector−Emitter Sustaining Voltage − NPN PNP VCEO(sus) = 160 Vdc − MJE4343 MJE4353 High DC Current Gain − @ IC = 8.0 Adc hFE = 35 (Typ) Low Collector−Emitter Saturation Voltage − VCE(sat) = 2.0 Vdc (Max) @ IC = 8.0 Adc These are Pb−Free Devices MAXIMUM RATINGS Rating Symbol Max Collector−Emitter Voltage VCEO 160 Collector−Base Voltage VCB 160 Emitter−Base Voltage VEB 7.0 Collector Current − Continuous IC 16 Peak (Note 1) 20 Base Current − Continuous IB 5.0 Total Power Dissipation @ TC PD 125 = 25°C Operating and Storage Junction Temperature Range TJ, Tstg – 65 to + 150 THERMAL CHARACTERISTICS Characteristic Symbol Max Thermal Resistance, Junction RqJC 1.0 to Case 1. Pulse Test: Pulse Width v 5.0 ms, Duty Cycle w 10%. Unit Vdc Vdc Vdc Adc Adc Watts °C Unit °C/W http://onsemi.com 16 AMPS POWER TRANSISTORS COMPLEMENTARY SILICON 160 VOLTS 4 1 2 3 SOT−93 CASE 340D STYLE 1 TO−247 CASE 340L STYLE 3 NOTE: Effective June 2012 this device will be available only in the TO−247 package. Reference FPCN# 16827. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2012 1 May, 2012 − Rev. 5 Publication Order Number: MJE4343/D...