NPN Transistor. MJE4343 Datasheet

MJE4343 Transistor. Datasheet pdf. Equivalent


ON Semiconductor MJE4343
MJE4343 (NPN),
MJE4353 (PNP)
High-Voltage - High Power
Transistors
. . . designed for use in high power audio amplifier applications and
high voltage switching regulator circuits.
Features
High CollectorEmitter Sustaining Voltage
NPN PNP
VCEO(sus) = 160 Vdc MJE4343 MJE4353
High DC Current Gain @ IC = 8.0 Adc hFE = 35 (Typ)
Low CollectorEmitter Saturation Voltage
VCE(sat) = 2.0 Vdc (Max) @ IC
= 8.0 Adc
These are PbFree Devices
MAXIMUM RATINGS
Rating
Symbol
Max
CollectorEmitter Voltage
VCEO
160
CollectorBase Voltage
VCB
160
EmitterBase Voltage
VEB
7.0
Collector Current
Continuous
IC
16
Peak (Note 1)
20
Base Current Continuous
IB
5.0
Total Power Dissipation @ TC
PD
125
= 25°C
Operating and Storage Junc-
tion
Temperature Range
TJ, Tstg
– 65 to + 150
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Thermal Resistance, Junction
RqJC
1.0
to Case
1. Pulse Test: Pulse Width v 5.0 ms, Duty Cycle w 10%.
Unit
Vdc
Vdc
Vdc
Adc
Adc
Watts
°C
Unit
°C/W
http://onsemi.com
16 AMPS
POWER TRANSISTORS
COMPLEMENTARY
SILICON
160 VOLTS
4
1
2
3
SOT93
CASE 340D
STYLE 1
TO247
CASE 340L
STYLE 3
NOTE: Effective June 2012 this device will
be available only in the TO247
package. Reference FPCN# 16827.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2012
1
May, 2012 Rev. 5
Publication Order Number:
MJE4343/D


MJE4343 Datasheet
Recommendation MJE4343 Datasheet
Part MJE4343
Description NPN Transistor
Feature MJE4343; MJE4343 (NPN), MJE4353 (PNP) High-Voltage - High Power Transistors . . . designed for use in high p.
Manufacture ON Semiconductor
Datasheet
Download MJE4343 Datasheet




ON Semiconductor MJE4343
MJE4343 (NPN), MJE4353 (PNP)
MARKING DIAGRAMS
TO247
SOT93
MJE43x3
AYWWG
1 BASE
3 EMITTER
1 BASE
AYWWG
MJE43x3
G
3 EMITTER
2 COLLECTOR
2 COLLECTOR
MJE43x3
A
Y
WW
G
= Device Code
= Assembly Location
= Year
= Work Week
= PbFree Package
ORDERING INFORMATION
Device Order Number
MJE4343G
MJE4353G
MJE4343G
MJE4353G
Package Type
SOT93
(PbFree)
SOT93
(PbFree)
TO247
(PbFree)
TO247
(PbFree)
Shipping
30 Units / Rail
30 Units / Rail
30 Units / Rail
30 Units / Rail
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0 25 50 75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Figure 1. Power Derating
Reference: Ambient Temperature
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2



ON Semiconductor MJE4343
MJE4343 (NPN), MJE4353 (PNP)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Characteristic
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ OFF CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ CollectorEmitter Sustaining Voltage (Note 2)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (IC = 200 mAdc, IB = 0)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ CollectorEmitter Cutoff Current
(VCE = 80 Vdc, IB = 0)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ CollectorEmitter Cutoff Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (VCE = Rated VCB, VEB(off) = 1.5 Vdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (VCE = Rated VCB, VEB(off) = 1.5 Vdc, TC = 150°C)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ CollectorBase Cutoff Current
(VCB = Rated VCB, IE = 0)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ EmitterBase Cutoff Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (VBE = 7.0 Vdc, IC = 0)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ON CHARACTERISTICS (Note 2)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ DC Current Gain
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (IC = 8.0 Adc, VCE = 2.0 Vdc)
(IC = 16 Adc, VCE = 4.0 Vdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ CollectorEmitter Saturation Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (IC = 8.0 Adc, IB = 800 mA)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (IC = 16 Adc, IB = 2.0 Adc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ BaseEmitter Saturation Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (IC = 16 Adc, IB = 2.0 Adc)
BaseEmitter On Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (IC = 16 Adc, VCE = 4.0 Vdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ DYNAMIC CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ CurrentGain Bandwidth Product (Note 3)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (IC = 1.0 Adc, VCE = 20 Vdc, ftest = 0.5 MHz)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Output Capacitance
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ 2. Pulse Test: Pulse Width v 300 ms, Duty Cycle w 2.0%.
Symbol
Min
VCEO(sus)
160
ICEO
ICEX
ICBO
IEBO
Max
Unit
Vdc
mAdc
750
1.0
mAdc
5.0
750
mAdc
1.0
mAdc
hFE
VCE(sat)
VBE(sat)
VBE(on)
15
35 (Typ)
8.0
15 (Typ)
Vdc
2.0
3.5
3.9
Vdc
3.9
Vdc
fT
1.0
MHz
Cob
800
pF
3. fT = hfe⎪• ftest.
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