2SK1180

isc N-Channel MOSFET Transistor 2SK1180 DESCRIPTION ·Drain Current –ID= 10A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed especially for low voltage,high speed applications, ·Chopper regulator,DC-DC converter and motor drive applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 500 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=25℃ 10 A Ptot Total Dissipation@TC=25℃ 85 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.47 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 0.25mA VGS(TH) Gate Threshold Voltage VDS=VGS,ID= 0.25mA RDS(ON) Drain-Source On-stage Resistance VGS= 10V; ID=5A IGSS Gate Source Leakage Current IDSS Zero Gate Voltage Drain Current VGS= ±20 V; VDS= 0 VDS=500V; VGS= 0 VSD Diode Forward Voltage IS=5A; VGS=0 2SK1180 MIN MAX UNIT 500 V 2 4 V 0.6 Ω ±500 nA 250 μA 1.5 V NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without ...