Document
APT11N80BC3G
800V 11A 0.45Ω
Super Junction MOSFET
TO-247
• Ultra low RDS(ON) • Low Miller Capacitance
• Ultra Low Gate Charge, Qg • Avalanche Energy Rated
• TO-247 Package
D G
S
MAXIMUM RATINGS Symbol Parameter
All Ratings: TC = 25°C unless otherwise specif ed.
APT11N80BC3G
UNIT
VDSS ID IDM VGS
VGSM
PD
Drain-Source Voltage
Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 Gate-Source Voltage Continuous Gate-Source Voltage Transient
Total Power Dissipation @ TC = 25°C Linear Derating Factor
800 11 33 ±20 ±30 156 1.25
Volts Amps
Volts Watts W/°C
TJ,TSTG TL dv/dt IAR EAR EAS
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec. Drain-Source Voltage slope (VDS = 640V, ID = 11A, TJ = 125°C) Repetitive Avalanche Current 7 Repetitive Avalanche Energy 7 Single Pulse Avalanche Energy 4
-55 to 150 260 50 11 0.2 470
°C V/ns Amps mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX UNIT
BVDSS RDS(on)
IDSS
IGSS VGS(th)
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250μA) Drain-Source On-State Resistance 2 (VGS = 10V, ID = 7.1A) Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V, TJ = 150°C) Gate-Source Leakage Current (VGS = ±20V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 680μA)
800
Volts
0.39 0.45 Ohms
0.5
20
μA
200
±100 nA
2.1
3
3.9 Volts
050-7136 Rev D 9-2017
"COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trademark of Infineon Technologies AG"
DYNAMIC CHARACTERISTICS
APT11N80BC3G
Symbol Characteristic
Test Conditions
MIN TYP MAX UNIT
Ciss Coss Crss Qg Qgs Qgd td(on)
tr td(off)
tf
Eon
Eoff
Eon
Eoff
Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy 6 Turn-off Switching Energy Turn-on Switching Energy 6 Turn-off Switching Energy
VGS = 0V VDS = 25V f = 1 MHz
VGS = 10V VDD = 400V ID = 11A @ 25°C
RESISTIVE SWITCHING
VGS = 10V VDD = 400V ID = 11A @ 25°C RG = 7.5Ω
INDUCTIVE SWITCHING @ 25°C
VDD = 533V, VGS = 15V ID = 11A, RG = 5Ω
INDUCTIVE SWITCHING @ 125°C
VDD = 533V VGS = 15V ID = 11A, RG = 5Ω
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol Characteristic / Test Conditions
1585
770
18
60
8
30
25
15
70
80
7
10
165
50
305
65
MIN TYP MAX
pF nC
ns
μJ UNIT
IS
Continuous Source Current (Body Diode)
ISM
Pulsed Source Current 1 (Body Diode)
VSD
Diode Forward Voltage 2 (VGS = 0V, IS = -11A)
t rr
Reverse Recovery Time (IS = 11A, dlS/dt = -100A/μs, VR = 640V)
Q rr Reverse Recovery Charge (IS = 11A, dlS/dt = -100A/μs, VR = 640V)
dv/dt
Peak Diode Recovery dv/dt 5
THERMAL CHARACTERISTICS
Symbol Characteristic
11
Amps
33
1
1.2
Volts
550
ns
10
μC
6
V/ns
MIN TYP MAX UNIT
RθJC RθJA
Junction to Case Junction to Ambient
0.80 62
°C/W
1 Repetitve avalanche causes additional power losses that can
be calculated as PAV=EAR*f 2 Pulse Test: Pulse width < 380 μs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 5
dSdvet/avdritctinenugimtsTebj l=ef.r+s2ISr5e≤°fCe-c,IDtLt1h=1eA1l9im4dmii/tadHtti,≤oR7n0sG0o=Af /2tμh5seΩt,eVPsRet≤acikVrcDIuLSiS=t r2aT.t2JhA≤er1t5h0a°nCthe
6 Eon includes diode reverse recovery. See f gures 18, 20.
7 Repetitve avalanche causes additional power losses that can be
APT Reserves the right to change, without notice, the specifications and infcoarmlcautliaotnedcoanstaPinAVe=dEhAeR*ref in. 0.90
050-7136 Rev D 9-2017 ZθJC, THERMAL IMPEDANCE (°C/W)
0.80 0.9
0.70
0.60
0.7
0.50
0.40
0.5
0.30
0.3
0.20
0.10
0.1
0.05
SINGLE PULSE
0
10-5
10-4
10-3
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
Typical Performance Curves
Junction temp. (°C)
Power (watts)
Case temperature
RC MODEL 0.345 0.455
0.00375 0.101
ID, DRAIN CURRENT (AMPERES)
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
45
VDS> ID (ON) x RDS (ON)MAX.
40
250μSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
35
30
TJ = -55°C
25
TJ = +25°C
20 TJ = +125°C
15
10
5
0 0 1 2 3 4 5 6 7 8 9 10 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS
12
ID, DRAIN CURRENT (AMPERES)
10
8
6
4
2
RESISTANCE
0
25
50
75
100 125 150
FIGURE 6, MAXIMTUCM, CDARSAEINTECMUPRERREANTTUvRsEC(A°CS)E TEMPERATURE
3.0
ID = 5.5A
2.5
VGS = 10V
DRAIN-TO-SOURCE ON (NORMALIZED)
2.0
1.5
1.0
0.5
RDS(ON),
0 -50 -25 0 25 50 75 100 125 150 FIGURETJ8, ,JOUNN-CRTEIOSINSTTAENMCPEERvsA.TTUERMEP(E°CR)ATURE
VGS(TH),
THRESHOLD VOLTAGE (NORMALIZED)
BVDSS,
DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED)
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
ID, DRAIN CURRENT (AMPERES)
APT11N80BC3G
30
25
VGS =15 & 10V
20
6V
15
10
5V
5 4V
.