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APT11N80BC3G Dataheets PDF



Part Number APT11N80BC3G
Manufacturers Microsemi
Logo Microsemi
Description Super Junction MOSFET
Datasheet APT11N80BC3G DatasheetAPT11N80BC3G Datasheet (PDF)

APT11N80BC3G 800V 11A 0.45Ω Super Junction MOSFET TO-247 • Ultra low RDS(ON) • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • TO-247 Package D G S MAXIMUM RATINGS Symbol Parameter All Ratings: TC = 25°C unless otherwise specif ed. APT11N80BC3G UNIT VDSS ID IDM VGS VGSM PD Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear De.

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APT11N80BC3G 800V 11A 0.45Ω Super Junction MOSFET TO-247 • Ultra low RDS(ON) • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • TO-247 Package D G S MAXIMUM RATINGS Symbol Parameter All Ratings: TC = 25°C unless otherwise specif ed. APT11N80BC3G UNIT VDSS ID IDM VGS VGSM PD Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor 800 11 33 ±20 ±30 156 1.25 Volts Amps Volts Watts W/°C TJ,TSTG TL dv/dt IAR EAR EAS Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Drain-Source Voltage slope (VDS = 640V, ID = 11A, TJ = 125°C) Repetitive Avalanche Current 7 Repetitive Avalanche Energy 7 Single Pulse Avalanche Energy 4 -55 to 150 260 50 11 0.2 470 °C V/ns Amps mJ STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT BVDSS RDS(on) IDSS IGSS VGS(th) Drain-Source Breakdown Voltage (VGS = 0V, ID = 250μA) Drain-Source On-State Resistance 2 (VGS = 10V, ID = 7.1A) Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V, TJ = 150°C) Gate-Source Leakage Current (VGS = ±20V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 680μA) 800 Volts 0.39 0.45 Ohms 0.5 20 μA 200 ±100 nA 2.1 3 3.9 Volts 050-7136 Rev D 9-2017 "COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trademark of Infineon Technologies AG" DYNAMIC CHARACTERISTICS APT11N80BC3G Symbol Characteristic Test Conditions MIN TYP MAX UNIT Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Eon Eoff Eon Eoff Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy 6 Turn-off Switching Energy Turn-on Switching Energy 6 Turn-off Switching Energy VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 400V ID = 11A @ 25°C RESISTIVE SWITCHING VGS = 10V VDD = 400V ID = 11A @ 25°C RG = 7.5Ω INDUCTIVE SWITCHING @ 25°C VDD = 533V, VGS = 15V ID = 11A, RG = 5Ω INDUCTIVE SWITCHING @ 125°C VDD = 533V VGS = 15V ID = 11A, RG = 5Ω SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol Characteristic / Test Conditions 1585 770 18 60 8 30 25 15 70 80 7 10 165 50 305 65 MIN TYP MAX pF nC ns μJ UNIT IS Continuous Source Current (Body Diode) ISM Pulsed Source Current 1 (Body Diode) VSD Diode Forward Voltage 2 (VGS = 0V, IS = -11A) t rr Reverse Recovery Time (IS = 11A, dlS/dt = -100A/μs, VR = 640V) Q rr Reverse Recovery Charge (IS = 11A, dlS/dt = -100A/μs, VR = 640V) dv/dt Peak Diode Recovery dv/dt 5 THERMAL CHARACTERISTICS Symbol Characteristic 11 Amps 33 1 1.2 Volts 550 ns 10 μC 6 V/ns MIN TYP MAX UNIT RθJC RθJA Junction to Case Junction to Ambient 0.80 62 °C/W 1 Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f 2 Pulse Test: Pulse width < 380 μs, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 4 5 dSdvet/avdritctinenugimtsTebj l=ef.r+s2ISr5e≤°fCe-c,IDtLt1h=1eA1l9im4dmii/tadHtti,≤oR7n0sG0o=Af /2tμh5seΩt,eVPsRet≤acikVrcDIuLSiS=t r2aT.t2JhA≤er1t5h0a°nCthe 6 Eon includes diode reverse recovery. See f gures 18, 20. 7 Repetitve avalanche causes additional power losses that can be APT Reserves the right to change, without notice, the specifications and infcoarmlcautliaotnedcoanstaPinAVe=dEhAeR*ref in. 0.90 050-7136 Rev D 9-2017 ZθJC, THERMAL IMPEDANCE (°C/W) 0.80 0.9 0.70 0.60 0.7 0.50 0.40 0.5 0.30 0.3 0.20 0.10 0.1 0.05 SINGLE PULSE 0 10-5 10-4 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION Typical Performance Curves Junction temp. (°C) Power (watts) Case temperature RC MODEL 0.345 0.455 0.00375 0.101 ID, DRAIN CURRENT (AMPERES) FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL 45 VDS> ID (ON) x RDS (ON)MAX. 40 250μSEC. PULSE TEST @ <0.5 % DUTY CYCLE 35 30 TJ = -55°C 25 TJ = +25°C 20 TJ = +125°C 15 10 5 0 0 1 2 3 4 5 6 7 8 9 10 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS 12 ID, DRAIN CURRENT (AMPERES) 10 8 6 4 2 RESISTANCE 0 25 50 75 100 125 150 FIGURE 6, MAXIMTUCM, CDARSAEINTECMUPRERREANTTUvRsEC(A°CS)E TEMPERATURE 3.0 ID = 5.5A 2.5 VGS = 10V DRAIN-TO-SOURCE ON (NORMALIZED) 2.0 1.5 1.0 0.5 RDS(ON), 0 -50 -25 0 25 50 75 100 125 150 FIGURETJ8, ,JOUNN-CRTEIOSINSTTAENMCPEERvsA.TTUERMEP(E°CR)ATURE VGS(TH), THRESHOLD VOLTAGE (NORMALIZED) BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE ID, DRAIN CURRENT (AMPERES) APT11N80BC3G 30 25 VGS =15 & 10V 20 6V 15 10 5V 5 4V .


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