APT20M18B2VR

APT20M18B2VR A20M18LVR 200V 100A 0.018Ω POWER MOS V® MOSFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. B2VR T-Max® TO-264 MAX Package Faster Switching    Lower Leakage Avalanche Energy Rated TO-264 LVR D G MAXIMUM RATINGS Symbol Parameter VDSS ID IDM VGS VGSM PD Drain-Source Voltage Continuous Drain Current 6 @ TC = 25°C Pulsed Drain Current 1 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor TJ,TSTG TL IAR EAR EAS Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 (Repetitive and Non-Repetitive) Repetitive Avalanche Energy 1 Single Pulse Avalanche Energy 4 S All Ratings: TC = 25°C unless otherwise specified. APT20M18B2VR_LVR UNIT 200 Volts 100 Amps 400 ±30 Volts ±40 625 Watts 5.00 W/°C -55 to 150 300 100 °C Amps 50 mJ 3000 STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT BVDSS RDS(on) IDSS IGSS VGS(th) Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) 200 Drain-Source On-State Resistance 2 (VGS = 15V, ID = 50 A) Zero Gate Voltage Drain Current (VDS = 200V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 160...