isc N-Channel MOSFET Transistor
APT20M22LVFR
FEATURES ·Drain Current –ID= 100A@ TC=25℃ ·Drain Source Voltage-
: VDSS=2...
isc N-Channel MOSFET
Transistor
APT20M22LVFR
FEATURES ·Drain Current –ID= 100A@ TC=25℃ ·Drain Source Voltage-
: VDSS=200V(Min) ·Static Drain-Source On-Resistance
: RDS(on) =0.022Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
DESCRIPTION ·Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
200
V
VGS
Gate-Source Voltage-Continuous
±30
V
ID
Drain Current-Continuous
100
A
IDM
Drain Current-Single Pluse
400
A
PD
Total Dissipation @TC=25℃
520
W
TJ
Max. Operating Junction Temperature -55~150 ℃
Tstg
Storage Temperature
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT 0.24 ℃/W
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isc N-Channel MOSFET
Transistor
APT20M22LVFR
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID= 0.25mA
VGS(th) Gate Threshold Voltage
VDS= VGS; ID= 2.5mA
RDS(on) Drain-Source On-Resistance
VGS= 10V; ID=50A
IGSS
Gate-Body Leakage Current
IDSS
Zero Gate Voltage Drain Current
VSD
Forward On-Voltage
VGS= ±30V;VDS= 0
VDS= 200V; VGS= 0 VDS= 160V; VGS= 0@TC=125℃
IS=-100A; VGS= 0
MIN MAX UNIT
200
V
2
4
V
0.022
Ω
±100 nA
250 1000
μA
1.3
V
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