APT30N60BC6

APT30N60BC6 APT30N60SC6 600V 30A .125Ω COOLMOS Power Semiconductors Ultra Low RDS(ON) Low Miller Capacitance Ultra Low Gate Charge, Qg Avalanche Energy Rated Extreme dv/dt Rated Super Junction MOSFET TO-247 D3PAK D G S MAXIMUM RATINGS Symbol Parameter All Ratings per die: TC = 25°C unless otherwise specified. APT30N60B_SC6 UNIT VDSS ID IDM VGS PD TJ,TSTG TL dv/dt IAR EAR EAS Drain-Source Voltage Continuous Drain Current @ TC = 25°C Continuous Drain Current @ TC = 100°C Pulsed Drain Current 1 Total Power Dissipation @ TC = 25°C Gate-Source Voltage Continuous Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Drain-Source Voltage slope (VDS = 480V, ID = 30A, TJ = 125°C) Avalanche Current 2 Repetitive Avalanche Energy 2 ( Id = 5.2A, Vdd = 50V ) Single Pulse Avalanche Energy ( Id = 5.2A, Vdd = 50V ) 600 30 19 89 ±20 219 - 55 to 150 260 15 5.2 0.96 636 Volts Amps Volts Watts °C V/ns Amps mJ STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT BV(DSS) RDS(on) Drain-Source Breakdown Voltage (VGS = 0V, ID = 250μA) Drain-Source On-State Resistance 3 (VGS = 10V, ID = 14.5A) 600 0.11 0.125 IDSS Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V, TC = 150°C) 25 100 IGSS Gate-Source Leakage Current (VGS = ±20V, VDS = 0V) ±100 VGS(th) Gate Threshold Voltage (VDS = VGS, ID = 960μA) 2.5 3 3.5 CAUTION: These Devi...