2N5551 / MMBT5551 — NPN General-Purpose Amplifier
March March 20188
2N5551 / MMBT5551 NPN General-Purpose Amplifier
De...
2N5551 / MMBT5551 —
NPN General-Purpose Amplifier
March March 20188
2N5551 / MMBT5551
NPN General-Purpose Amplifier
Description
This device is designed for general-purpose high-voltage amplifiers and gas discharge display drivers.
2N5551
MMBT5551
3
TO-92
2
1 SOT-23
Marking: 3S 1. Base 2. Emitter 3. Collector
Ordering Information(1)
Part Number 2N5551TA 2N5551TFR 2N5551TF 2N5551BU MMBT5551
Top Mark 5551 5551 5551 5551 3S
Package TO-92 3L TO-92 3L TO-92 3L TO-92 3L SOT-23 3L
Note: 1. Suffix “-C” means Center Collector in 2N5551 (1. Emitter 2. Collector 3. Base)
Suffix “-Y” means hFE 180~240 in 2N5551 (Test condition: IC = 10 mA, VCE = 5.0 V)
Packing Method Ammo
Tape and Reel Tape and Reel
Bulk Tape and Reel
© 2009 Semiconductor Components Industries, LLC.,
2N5551 / MMBT5551 Rev. 2
1
www.onsemi.com
2N5551 / MMBT5551 —
NPN General-Purpose Amplifier
Absolute Maximum Ratings(2)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Value
Units
VCEO Collector-Emitter Voltage
160
V
VCBO Collector-Base Voltage
180
V
VEBO Emitter-Base Voltage
6
V
IC
Collector cu...