N-Channel MOSFET. FCH25N60N Datasheet

FCH25N60N MOSFET. Datasheet pdf. Equivalent

FCH25N60N Datasheet
Recommendation FCH25N60N Datasheet
Part FCH25N60N
Description N-Channel MOSFET
Feature FCH25N60N; .
Manufacture ON Semiconductor
Datasheet
Download FCH25N60N Datasheet




ON Semiconductor FCH25N60N
MOSFET – N-Channel,
SUPREMOS
600 V, 25 A, 126 mW
FCH25N60N
Description
The SUPREMOS® MOSFET is ON Semiconductor’s next
generation of high voltage superjunction (SJ) technology employing
a deep trench filling process that differentiates it from the
conventional SJ MOSFETs. This advanced technology and precise
process control provides lowest Rsp onresistance, superior switching
performance and ruggedness. SUPREMOS MOSFET is suitable for
high frequency switching power converter applications such as PFC,
server/telecom power, FPD TV power, ATX power, and industrial
power applications.
Features
RDS(on) = 108 mW (Typ.) @ VGS = 10 V, ID = 12.5 A
Ultra Low Gate Charge (Typ. Qg = 57 nC)
Low Effective Output Capacitance (Typ. Coss(eff.) = 262 pF)
100% Avalanche Tested
This Device is PbFree and is RoHS Compliant
Applications
Solar Inverter
ACDC Power Supply
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VDS
600 V
RDS(ON) MAX
126 mW @ 10 V
ID MAX
25 A
D
G
S
N-CHANNEL MOSFET
G
DS
TO2473LD
CASE 340CK
MARKING DIAGRAM
$Y&Z&3&K
FCH
25N60N
© Semiconductor Components Industries, LLC, 2011
August, 2020 Rev. 3
$Y
&Z
&3
&K
FCH25N60N
= ON Semiconductor Logo
= Assembly Plant Code
= Numeric Date Code
= Lot Code
= Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
1
Publication Order Number:
FCH25N60N/D



ON Semiconductor FCH25N60N
FCH25N60N
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Symbol
Parameter
Value
Unit
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
Continuous (TC = 25°C)
Continuous (TC = 100°C)
Pulsed (Note 1)
Single Pulsed Avalanche Energy (Note 2)
Avalanche Current (Note 1)
Repetitive Avalanche Energy (Note 1)
MOSFET dv/dt
600
V
±30
V
25
A
16
75
A
861
mJ
8.3
A
2.2
mJ
100
V/ns
Peak Diode Recovery dv/dt (Note 3)
20
PD
Power Dissipation
(TC = 25°C)
Derate above 25°C
216
W
1.72
W/°C
TJ, TSTG Operating and Storage Temperature Range
55 to + 150
°C
TL
Maximum Lead Temperature for Soldering, 1/8from Case for 5 Second
300
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. IAS = 8.3 A, RG = 25 W, starting TJ = 25 °C
3. ISD 25 A, di/dt 200 A/s, VDD 380 V, starting TJ = 25 °C
PACKAGE MARKING AND ORDERING INFORMATION
Part Number
Top Mark
Package
FCH25N60N
FCH25N60N
TO2473LD
Package Method
Tube
Reel Size
N/A
Tape Width
N/A
Quantity
30 Units
THERMAL CHARACTERISTICS
Symbol
Parameter
RqJC
RqJA
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
Value
0.58
40
Unit
°C/W
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2



ON Semiconductor FCH25N60N
FCH25N60N
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Symbol
Parameter
Test Condition
Min. Typ.
Max.
Unit
OFF CHARACTERISTICS
BVDSS
DBVDSS
/ DTJ
IDSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
ON CHARACTERISTICS
ID = 1 mA, VGS = 0 V, TJ = 25°C
ID = 1 mA, Referenced to 25°C
VDS = 480 V, VGS = 0 V
VDS = 480 V, TJ = 125°C
VGS = ±30 V, VDS = 0 V
600
V
0.74
V/°C
10
mA
100
±100
nA
VGS(th) Gate Threshold Voltage
RDS(on) Static Drain to Source On Resistance
DYNAMIC CHARACTERISTICS
VGS = VDS, ID = 250 mA
VGS = 10 V, ID = 12.5 A
2.0
4.0
V
0.108 0.126
W
Ciss
Coss
Crss
Coss
Coss(eff.)
Qg(tot)
Qgs
Qgd
ESR
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance
Total Gate Charge at 10 V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Equivalent Series Resistance(GS)
VDS = 100 V, VGS = 0 V,
f = 1 MHz
VDS = 380 V, VGS = 0 V, f = 1 MHz
VDS = 0 V to 480 V, VGS = 0 V
VDS = 380 V, ID = 12.5 A,
VGS = 10 V
(Note 4)
f = 1 MHz
2520
3352
pF
103
137
pF
3.2
5
pF
55
pF
262
pF
57
74
nC
10
nC
18
nC
1
W
SWITCHING CHARACTERISTICS
td(on)
Turn-On Delay Time
tr
TurnOn Rise Time
td(off)
Turn-Off Delay Time
tf
TurnOff Fall Time
DRAIN-SOURCE DIODE CHARACTERISTICS
VDD = 380 V, ID = 12.5 A,
VGS = 10 V, RG = 4.7 W
(Note 4)
21
52
ns
22
54
ns
68
146
ns
5
20
ns
IS
Maximum Continuous Drain to Source Diode Forward Current
25
A
ISM
Maximum Pulsed Drain to Source Diode Forward Current
75
A
VSD
Drain to Source Diode Forward Voltage VGS = 0 V, ISD = 12.5 A
1.2
V
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, ISD = 12.5 A,
dIF/dt = 100 A/ms
370
ns
7
mC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Essentially independent of operating temperature typical characteristics.
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3







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