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N-Channel MOSFET. 25N60N Datasheet |
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MOSFET – N-Channel,
SUPREMOS
600 V, 25 A, 126 mW
FCH25N60N
Description
The SUPREMOS® MOSFET is ON Semiconductor’s next
generation of high voltage super−junction (SJ) technology employing
a deep trench filling process that differentiates it from the
conventional SJ MOSFETs. This advanced technology and precise
process control provides lowest Rsp on−resistance, superior switching
performance and ruggedness. SUPREMOS MOSFET is suitable for
high frequency switching power converter applications such as PFC,
server/telecom power, FPD TV power, ATX power, and industrial
power applications.
Features
• RDS(on) = 108 mW (Typ.) @ VGS = 10 V, ID = 12.5 A
• Ultra Low Gate Charge (Typ. Qg = 57 nC)
• Low Effective Output Capacitance (Typ. Coss(eff.) = 262 pF)
• 100% Avalanche Tested
• This Device is Pb−Free and is RoHS Compliant
Applications
• Solar Inverter
• AC−DC Power Supply
www.onsemi.com
VDS
600 V
RDS(ON) MAX
126 mW @ 10 V
ID MAX
25 A
D
G
S
N-CHANNEL MOSFET
G
DS
TO−247−3LD
CASE 340CK
MARKING DIAGRAM
$Y&Z&3&K
FCH
25N60N
© Semiconductor Components Industries, LLC, 2011
August, 2020 − Rev. 3
$Y
&Z
&3
&K
FCH25N60N
= ON Semiconductor Logo
= Assembly Plant Code
= Numeric Date Code
= Lot Code
= Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
1
Publication Order Number:
FCH25N60N/D
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FCH25N60N
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Symbol
Parameter
Value
Unit
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
− Continuous (TC = 25°C)
− Continuous (TC = 100°C)
− Pulsed (Note 1)
Single Pulsed Avalanche Energy (Note 2)
Avalanche Current (Note 1)
Repetitive Avalanche Energy (Note 1)
MOSFET dv/dt
600
V
±30
V
25
A
16
75
A
861
mJ
8.3
A
2.2
mJ
100
V/ns
Peak Diode Recovery dv/dt (Note 3)
20
PD
Power Dissipation
(TC = 25°C)
− Derate above 25°C
216
W
1.72
W/°C
TJ, TSTG Operating and Storage Temperature Range
−55 to + 150
°C
TL
Maximum Lead Temperature for Soldering, 1/8″ from Case for 5 Second
300
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. IAS = 8.3 A, RG = 25 W, starting TJ = 25 °C
3. ISD ≤ 25 A, di/dt ≤ 200 A/s, VDD ≤ 380 V, starting TJ = 25 °C
PACKAGE MARKING AND ORDERING INFORMATION
Part Number
Top Mark
Package
FCH25N60N
FCH25N60N
TO−247−3LD
Package Method
Tube
Reel Size
N/A
Tape Width
N/A
Quantity
30 Units
THERMAL CHARACTERISTICS
Symbol
Parameter
RqJC
RqJA
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
Value
0.58
40
Unit
°C/W
www.onsemi.com
2
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FCH25N60N
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Symbol
Parameter
Test Condition
Min. Typ.
Max.
Unit
OFF CHARACTERISTICS
BVDSS
DBVDSS
/ DTJ
IDSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
ON CHARACTERISTICS
ID = 1 mA, VGS = 0 V, TJ = 25°C
ID = 1 mA, Referenced to 25°C
VDS = 480 V, VGS = 0 V
VDS = 480 V, TJ = 125°C
VGS = ±30 V, VDS = 0 V
600
−
−
V
−
0.74
−
V/°C
−
−
10
mA
−
−
100
−
−
±100
nA
VGS(th) Gate Threshold Voltage
RDS(on) Static Drain to Source On Resistance
DYNAMIC CHARACTERISTICS
VGS = VDS, ID = 250 mA
VGS = 10 V, ID = 12.5 A
2.0
−
4.0
V
−
0.108 0.126
W
Ciss
Coss
Crss
Coss
Coss(eff.)
Qg(tot)
Qgs
Qgd
ESR
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance
Total Gate Charge at 10 V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Equivalent Series Resistance(G−S)
VDS = 100 V, VGS = 0 V,
f = 1 MHz
VDS = 380 V, VGS = 0 V, f = 1 MHz
VDS = 0 V to 480 V, VGS = 0 V
VDS = 380 V, ID = 12.5 A,
VGS = 10 V
(Note 4)
f = 1 MHz
−
2520
3352
pF
−
103
137
pF
−
3.2
5
pF
−
55
−
pF
−
262
−
pF
−
57
74
nC
−
10
−
nC
−
18
−
nC
−
1
−
W
SWITCHING CHARACTERISTICS
td(on)
Turn-On Delay Time
tr
Turn−On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn−Off Fall Time
DRAIN-SOURCE DIODE CHARACTERISTICS
VDD = 380 V, ID = 12.5 A,
VGS = 10 V, RG = 4.7 W
(Note 4)
−
21
52
ns
−
22
54
ns
−
68
146
ns
−
5
20
ns
IS
Maximum Continuous Drain to Source Diode Forward Current
−
−
25
A
ISM
Maximum Pulsed Drain to Source Diode Forward Current
−
−
75
A
VSD
Drain to Source Diode Forward Voltage VGS = 0 V, ISD = 12.5 A
−
−
1.2
V
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, ISD = 12.5 A,
dIF/dt = 100 A/ms
−
370
−
ns
−
7
−
mC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Essentially independent of operating temperature typical characteristics.
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