Fast SRAM. 71V256SA Datasheet

71V256SA SRAM. Datasheet pdf. Equivalent


Renesas 71V256SA
Lower Power
3.3V CMOS Fast SRAM
256K (32K x 8-Bit)
71V256SA
Features
Ideal for high-performance processor secondary cache
Commercial (0°C to +70°C) and Industrial (–40°C to +85°C)
temperature range options
Fast access times:
– Commercial and Industrial: 12/15/20ns
Low standby current (maximum):
– 2mA full standby
Small packages for space-efficient layouts:
– 28-pin 300 mil SOJ
– 28-pin TSOP Type I
Produced with advanced high-performance CMOS
technology
Inputs and outputs are LVTTL-compatible
Single 3.3V(±0.3V) power supply
Industrial temperature range (–40°C to +85°C) is available
for selected speeds
Green parts available, see ordering information
Description
The IDT71V256SA is a 262,144-bit high-speed static RAM organized
as 32K x 8. It is fabricated using a high-performance, high-reliability CMOS
technology.
The IDT71V256SA has outstanding low power characteristics while
at the same time maintaining very high performance. Address access
times of as fast as 12ns are ideal for 3.3V secondary cache in 3.3V
desktop designs.
When power management logic puts the IDT71V256SA in standby
mode, its very low power characteristics contribute to extended battery life.
By taking CS HIGH, the SRAM will automatically go to a low power standby
mode and will remain in standby as long as CS remains HIGH. Further-
more, under full standby mode (CS at CMOS level, f=0), power consump-
tion is guaranteed to always be less than 6.6mW and typically will be much
smaller.
The IDT71V256SA is packaged in a 28-pin 300 mil SOJ and a 28-pin
300 mil TSOP Type I.
Functional Block Diagram
A0
A14
I/O0
I/O7
CS
OE
WE
ADDRESS
DECODER
INPUT
DATA
CIRCUIT
CONTROL
CIRCUIT
262,144 BIT
MEMORY ARRAY
I/O CONTROL
VCC
GND
,
3101 drw 01
1
Jun.02.20


71V256SA Datasheet
Recommendation 71V256SA Datasheet
Part 71V256SA
Description 3.3V CMOS Fast SRAM
Feature 71V256SA; Lower Power 3.3V CMOS Fast SRAM 256K (32K x 8-Bit) 71V256SA Features ◆ Ideal for high-performance .
Manufacture Renesas
Datasheet
Download 71V256SA Datasheet




Renesas 71V256SA
71V256SA
3.3V CMOS Static RAM 256K (32K x 8-Bit)
Pin Configurations(1)
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I /O0
I /O1
I /O2
GND
1
28
2
27
3
26
4
25
5 71V256SA 24
6 PJ G28 23
7
22
8
21
9
20
10
19
11
18
12
17
13
16
14
15
VCC
WE
A13
A8
A9
A11
OE
A10
CS
I /O7
I /O6
I /O5
I /O4
I /O3
3101 drw 02
DIP/SOJ
Top View
OE 22
A11
23
A9
24
A8 25
A13
26
WE 27
VCC
28
A14
1
A12
2
A7 3
A6
4
A5 5
A4 6
A3 7
71V256SA
PZG28
TSOP
Top View
21 A10
20 CS
19 I/O7
18 I/O6
17 I/O5
16 I/O4
15 I/O3
14 GND
13 I/O2
12 I/O1
11 I/O0
10 A0
9 A1
8 A2
3101 drw 03
Commercial and Industrial Temperature Ranges
Truth Table(1)
WE
CS
OE
I/O
Function
X
H
X
High-Z Standby (ISB)
X
VHC
X
High-Z Standby (ISB1)
H
L
H
High-Z Output Disable
H
L
L
DOUT Read
L
L
X
DIN
Write
NOTE:
1. H = VIH, L = VIL, X = Don’t Care
3101 tbl 02
Absolute Maximum Ratings(1)
Symbol
Rating
Com'l
Unit
VCC
Supply Voltage
Relative to GND
-0.5 to +4.6
V
VTERM(2)
Terminal Voltage
Relative to GND
-0.5 to VCC+0.5
V
TBIAS
Temperature Under Bias
-55 to +125
oC
TSTG
Storage Temperature
-55 to +125
oC
PT
Power Dissipation
1.0
W
IOUT
DC Output Current
50
mA
3101 tbl 03
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS
may cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these or any other conditions above those
indicated in the operational sections of this specification is not implied. Exposure
to absolute maximum rating conditions for extended periods may affect
reliability.
2. Input, Output, and I/O terminals; 4.6V maximum.
NOTE:
1. This text does not indicate orientation of actual part-marking.
Pin Descriptions
Name
A0 - A14
I/O0 - I/O7
CS
WE
OE
GND
VCC
Description
Addresses
Data Input/Output
Chip Select
Write Enable
Output Enable
Ground
Power
Capacitance
(TA = +25°C, f = 1.0MHz, SOJ package)
Symbol
Parameter(1)
Conditions Max. Unit
CIN
Input Capacitance
VIN = 3dV
6
pF
COUT
Output Capacitance
VOUT = 3dV
7
pF
NOTE:
3101 tbl 04
1. This parameter is determined by device characterization, but is not production
tested.
3101 tbl 01
Recommended Operating
Temperature and Supply Voltage
Grade
Temperature
GND
Vcc
Commercial
0OC to +70OC
0V
3.3V ± 0.3V
Industrial
-40OC to +85OC
0V
3.3V ± 0.3V
3101 tbl 05
2
Jun.02.20



Renesas 71V256SA
71V256SA
3.3V CMOS Static RAM 256K (32K x 8-Bit)
Recommended DC Operating
Conditions
Symbol
Parameter
Min. Typ. Max. Unit
VCC Supply Voltage
GND Ground
3.0 3.3
3.6
V
0
0
0
V
VIH Input High Voltage - Inputs 2.0 ____ VCC +0.3 V
VIH Input High Voltage - I/O
2.0 ____ VCC +0.3 V
VIL Input Low Voltage
-0.3(1) ____
0.8
V
NOTE:
3101 tbl 06
1. VIL (min.) = –2.0V for pulse width less than 5ns, once per cycle.
Commercial and Industrial Temperature Ranges
DC Electrical Characteristics(1)
(VCC = 3.3V ± 0.3V, VLC = 0.2V, VHC = VCC - 0.2V, Commercial and Industrial Temperature Ranges)
Symbol
Parameter
71V256SA12
71V256SA15
71V256SA20
Unit
ICC
Dynamic Operating Current CS < VIL, Outputs
90
85
85
mA
Open, VCC = Max., f = fMAX(2)
ISB
Standby Power Supply Current (TTL Level)
20
20
20
mA
CS = VIH, VCC = Max., Outputs Open, f = fMAX(2)
ISB1
Full Standby Power Supply Current (CMOS Level)
2
2
2
mA
CS > VHC, VCC = Max., Outputs Open, f = 0(2),
VIN < VLC or VIN > VHC
NOTES:
1. All values are maximum guaranteed values.
2. fMAX = 1/tRC, only address inputs cycling at fMAX; f = 0 means that no inputs are cycling.
3101 tbl 07
DC Electrical Characteristics
(VCC = 3.3V± 0.3V)
Symbol
|ILI|
|ILO|
VOL
VOH
Parameter
Input Leakage Current
Output Leakage Current
Output Low Voltage
Output High Voltage
Test Conditions
VCC = Max., VIN = GND to VCC
VCC = Max., CS = VIH, VOUT = GND to VCC
IOL = 8mA, VCC = Min.
IOH = -4mA, VCC = Min.
IDT71V256SA
Min.
Typ.
Max.
Unit
___
___
2
µA
___
___
2
µA
___
___
0.4
V
2.4
___
___
V
3101 tbl 08
6.432
Jun.02.20







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