Operational Amplifier. LF353M Datasheet

LF353M Amplifier. Datasheet pdf. Equivalent


etcTI LF353M
LF353-N
www.ti.com
SNOSBH3F – APRIL 1998 – REVISED MARCH 2013
LF353-N Wide Bandwidth Dual JFET Input Operational Amplifier
Check for Samples: LF353-N
FEATURES
1
2 Internally Trimmed Offset Voltage: 10 mV
• Low Input Bias Current: 50pA
• Low Input Noise Voltage: 25 nV/Hz
• Low Input Noise Current: 0.01 pA/Hz
• Wide Gain Bandwidth: 4 MHz
• High Slew Rate: 13 V/μs
• Low Supply Current: 3.6 mA
• High Input Impedance: 1012Ω
• Low Total Harmonic Distortion : 0.02%
• Low 1/f Noise Corner: 50 Hz
• Fast Settling Time to 0.01%: 2 μs
DESCRIPTION
These devices are low cost, high speed, dual JFET
input operational amplifiers with an internally trimmed
input offset voltage (BI-FET II technology). They
require low supply current yet maintain a large gain
bandwidth product and fast slew rate. In addition, well
matched high voltage JFET input devices provide
very low input bias and offset currents. The LF353-N
is pin compatible with the standard LM1558 allowing
designers to immediately upgrade the overall
performance of existing LM1558 and LM358 designs.
These amplifiers may be used in applications such as
high speed integrators, fast D/A converters, sample
and hold circuits and many other circuits requiring low
input offset voltage, low input bias current, high input
impedance, high slew rate and wide bandwidth. The
devices also exhibit low noise and offset voltage drift.
Typical Connection
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
All trademarks are the property of their respective owners.
2
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 1998–2013, Texas Instruments Incorporated


LF353M Datasheet
Recommendation LF353M Datasheet
Part LF353M
Description Wide Bandwidth Dual JFET Input Operational Amplifier
Feature LF353M; LF353-N www.ti.com SNOSBH3F – APRIL 1998 – REVISED MARCH 2013 LF353-N Wide Bandwidth Dual JFET In.
Manufacture etcTI
Datasheet
Download LF353M Datasheet




etcTI LF353M
LF353-N
SNOSBH3F – APRIL 1998 – REVISED MARCH 2013
Simplified Schematic
www.ti.com
Figure 1. 1/2 Dual
Dual-In-Line Package
Top View
Figure 2. 8-Pin SOIC (See D Package)
8-Pin PDIP (See P Package)
2
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Product Folder Links: LF353-N
Copyright © 1998–2013, Texas Instruments Incorporated



etcTI LF353M
LF353-N
www.ti.com
SNOSBH3F – APRIL 1998 – REVISED MARCH 2013
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
Absolute Maximum Ratings(1)(2)
Supply Voltage
Power Dissipation
±18V
See (3)
Operating Temperature Range
0°C to +70°C
Tj(MAX)
Differential Input Voltage
Input Voltage Range(4)
150°C
±30V
±15V
Output Short Circuit Duration
Continuous
Storage Temperature Range
65°C to +150°C
Lead Temp. (Soldering, 10 sec.)
260°C
Soldering Information: Dual-In-Line Package Soldering (10 sec.)
260°C
Small Outline Package
Vapor Phase (60 sec.)
215°C
ESD Tolerance(5)
Infrared (15 sec.)
220°C
1000V
θJA D Package
TBD
(1) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating ratings indicate conditions for
which the device is functional, but do not ensure specific performance limits. Electrical Characteristics state DC and AC electrical
specifications under particular test conditions which ensure specific performance limits. This assumes that the device is within the
Operating Ratings. Specifications are not ensured for parameters where no limit is given, however, the typical value is a good indication
of device performance.
(2) If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/ Distributors for availability and
specifications.
(3) For operating at elevated temperatures, the device must be derated based on a thermal resistance of 115°C/W typ junction to ambient
for the P package, and 160°C/W typ junction to ambient for the D package.
(4) Unless otherwise specified the absolute maximum negative input voltage is equal to the negative power supply voltage.
(5) Human body model, 1.5 kΩ in series with 100 pF.
Copyright © 1998–2013, Texas Instruments Incorporated
Product Folder Links: LF353-N
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