MOSFET
APT38N60BC6 APT38N60SC6
600V 38A 0.099Ω
COOLMOS
Power Semiconductors
Super Junction MOSFET
• Ultra Low RDS(ON) • Low ...
Description
APT38N60BC6 APT38N60SC6
600V 38A 0.099Ω
COOLMOS
Power Semiconductors
Super Junction MOSFET
Ultra Low RDS(ON) Low Miller Capacitance
Ultra Low Gate Charge, Qg Avalanche Energy Rated Extreme dv/dt Rated Popular TO-247 or Surface Mount D3 package.
TO-247
D3PAK
D G
S
MAXIMUM RATINGS
All Ratings per die: TC = 25°C unless otherwise specified.
Symbol Parameter
APT38N60B_SC6
UNIT
VDSS
ID
IDM VGS PD TJ,TSTG TL dv/dt IAR EAR EAS
Drain-Source Voltage
Continuous Drain Current @ TC = 25°C Continuous Drain Current @ TC = 100°C Pulsed Drain Current 1 Gate-Source Voltage Continuous
Total Power Dissipation @ TC = 25°C Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Drain-Source Voltage slope (VDS = 480V, ID = 38A, TJ = 125°C) Avalanche Current 2 Repetitive Avalanche Energy 2 ( Id = 6.6A, Vdd = 50V ) Single Pulse Avalanche Energy ( Id = 6.6A, Vdd = 50V )
600 38 24 112 ±20 278 -55 to 150 260 15 6.6 1.2 796
Volts
Amps
Volts Watts
°C V/ns Amps mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN
TYP
MAX UNIT
BV(DSS) Drain-Source Breakdown Voltage (VGS = 0V, ID = 250μA)
600
RDS(on) Drain-Source On-State Resistance 3 (VGS = 10V, ID = 18A)
0.099
IDSS
Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V, TC = 150°C)
25 100
IGSS
Gate-Source Leakage Current (VGS = ±20V, VDS = 0V)
±100
VGS(th) Gate Threshold Voltage (VDS = VGS, ID =...
Similar Datasheet
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