MOSFET
APT47N60BC3(G) APT47N60SC3(G)
600V 47A 0.070Ω
Super Junction MOSFET
TO-247
D3PAK
• Ultra Low RDS(ON) • Low Miller Ca...
Description
APT47N60BC3(G) APT47N60SC3(G)
600V 47A 0.070Ω
Super Junction MOSFET
TO-247
D3PAK
Ultra Low RDS(ON) Low Miller Capacitance
Ultra Low Gate Charge, Qg Avalanche Energy Rated Extreme dv/dt Rated Popular TO-247 or Surface Mount D3 package.
RoHS Compliant
D G
S
MAXIMUM RATINGS Symbol Parameter
All Ratings: TC = 25°C unless otherwise specified. APT47N60BC3_SC3(G) UNIT
VDSS ID IDM VGS
VGSM
PD
Drain-Source Voltage
Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 Gate-Source Voltage Continuous Gate-Source Voltage Transient
Total Power Dissipation @ TC = 25°C Linear Derating Factor
600 47 141 ±20 ±30 417 3.33
Volts Amps
Volts Watts W/°C
TJ,TSTG TL dv/dt IAR EAR EAS
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec. Drain-Source Voltage slope (VDS = 480V, ID = 47A, TJ = 125°C) Repetitive Avalanche Current 7 Repetitive Avalanche Energy 7 Single Pulse Avalanche Energy 4
-55 to 150 260 50 20 1 1800
°C V/ns Amps mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX UNIT
BVDSS RDS(on)
IDSS
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250μA) Drain-Source On-State Resistance 2 (VGS = 10V, ID = 30A) Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V)
Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V, TJ = 150°C)
600 0.06 0.07 0.5 25 250
IGSS VGS(th)
Gate-Source Leakage Current (VGS = ±20V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 2.7mA)
±100
2.10 3
...
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