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APT47N65SC3 Dataheets PDF



Part Number APT47N65SC3
Manufacturers Microsemi
Logo Microsemi
Description MOSFET
Datasheet APT47N65SC3 DatasheetAPT47N65SC3 Datasheet (PDF)

APT47N65BC3 APT47N65SC3 650V 47A 0.070Ω COOL MOS Po we r Se miconduc tors Super Junction MOSFET • Ultra low RDS(ON) • Increased Power Dissipation • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • TO-247 or Surface Mount D3PAK Package TO-247 D3PAK D G S MAXIMUM RATINGS Symbol Parameter All Ratings: TC = 25°C unless otherwise specified. APT47N65B_SC3 UNIT VDSS ID IDM VGS VGSM PD Drain-Source Voltage Continuous Drain Curren.

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APT47N65BC3 APT47N65SC3 650V 47A 0.070Ω COOL MOS Po we r Se miconduc tors Super Junction MOSFET • Ultra low RDS(ON) • Increased Power Dissipation • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • TO-247 or Surface Mount D3PAK Package TO-247 D3PAK D G S MAXIMUM RATINGS Symbol Parameter All Ratings: TC = 25°C unless otherwise specified. APT47N65B_SC3 UNIT VDSS ID IDM VGS VGSM PD Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor 650 47 141 ±20 ±30 417 3.33 Volts Amps Volts Watts W/°C TJ,TSTG TL dv/dt IAR EAR EAS Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Drain-Source Voltage slope (VDS = 480V, ID = 47A, TJ = 125°C) Repetitive Avalanche Current 7 ++++Repetitive Avalanche Energy 7 Single Pulse Avalanche Energy 4 Single Pulse Avalanche Energy 4 -55 to 150 260 50 20 1 1800 °C V/ns Amps mJ STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT BVDSS RDS(on) IDSS IGSS VGS(th) Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) 650 Drain-Source On-State Resistance 2 (VGS = 10V, ID = 30 A) 0.06 Zero Gate Voltage Drain Current (VDS = 650V, VGS = 0V) 0.5 Zero Gate Voltage Drain Current (VDS = 650V, VGS = 0V, T J = 150°C) Gate-Source Leakage Current (VGS = ±20V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 2.7mA) 2.10 3 0.07 25 250 ±100 3.9 Volts Ohms µA nA Volts CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. "COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trademark of Infineon Technologies AG." Microsemi Website - http://www.microsemi.com 050-7202 Rev C 6-2014 DYNAMIC CHARACTERISTICS APT47N65BC3 Symbol Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy 6 Turn-off Switching Energy Turn-on Switching Energy 6 Turn-off Switching Energy Test Conditions MIN VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 300V ID = 47A @ 25°C INDUCTIVE SWITCHING VGS = 13V VDD = 380V ID = 47A @ 125°C RG = 5Ω INDUCTIVE SWITCHING @ 25°C VDD = 400V, VGS = 15V ID = 47A, RG = 5Ω INDUCTIVE SWITCHING @ 125°C VDD = 400V VGS = 15V ID = 47A, RG = 5Ω TYP 6965 2100 85 250 30 105 18 28 295 84 810 840 1172 985 MAX 8355 2940 127 375 45 157 36 56 442 168 1620 1680 1758 1970 UNIT pF nC ns µJ SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT IS Continuous Source Current (B.


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