Document
APT47N65BC3 APT47N65SC3
650V 47A 0.070Ω
COOL MOS
Po we r Se miconduc tors
Super Junction MOSFET
• Ultra low RDS(ON) • Increased Power Dissipation
• Low Miller Capacitance
• Ultra Low Gate Charge, Qg • Avalanche Energy Rated • TO-247 or Surface Mount D3PAK Package
TO-247
D3PAK
D G
S
MAXIMUM RATINGS Symbol Parameter
All Ratings: TC = 25°C unless otherwise specified.
APT47N65B_SC3
UNIT
VDSS ID IDM VGS
VGSM
PD
Drain-Source Voltage
Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 Gate-Source Voltage Continuous Gate-Source Voltage Transient
Total Power Dissipation @ TC = 25°C Linear Derating Factor
650 47 141 ±20 ±30 417 3.33
Volts Amps
Volts Watts W/°C
TJ,TSTG TL dv/dt IAR EAR EAS
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec. Drain-Source Voltage slope (VDS = 480V, ID = 47A, TJ = 125°C) Repetitive Avalanche Current 7 ++++Repetitive Avalanche Energy 7 Single Pulse Avalanche Energy 4 Single Pulse Avalanche Energy 4
-55 to 150 260 50 20 1 1800
°C V/ns Amps mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX UNIT
BVDSS RDS(on)
IDSS
IGSS VGS(th)
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
650
Drain-Source On-State Resistance 2 (VGS = 10V, ID = 30 A)
0.06
Zero Gate Voltage Drain Current (VDS = 650V, VGS = 0V)
0.5
Zero Gate Voltage Drain Current (VDS = 650V, VGS = 0V, T J = 150°C)
Gate-Source Leakage Current (VGS = ±20V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 2.7mA)
2.10
3
0.07 25 250 ±100 3.9
Volts Ohms
µA
nA Volts
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
"COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trademark of Infineon Technologies AG."
Microsemi Website - http://www.microsemi.com
050-7202 Rev C 6-2014
DYNAMIC CHARACTERISTICS
APT47N65BC3
Symbol
Ciss Coss Crss Qg Qgs Qgd td(on)
tr td(off)
tf
Eon
Eoff
Eon
Eoff
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy 6 Turn-off Switching Energy Turn-on Switching Energy 6 Turn-off Switching Energy
Test Conditions
MIN
VGS = 0V VDS = 25V f = 1 MHz
VGS = 10V VDD = 300V ID = 47A @ 25°C
INDUCTIVE SWITCHING VGS = 13V VDD = 380V
ID = 47A @ 125°C RG = 5Ω
INDUCTIVE SWITCHING @ 25°C VDD = 400V, VGS = 15V ID = 47A, RG = 5Ω
INDUCTIVE SWITCHING @ 125°C VDD = 400V VGS = 15V ID = 47A, RG = 5Ω
TYP 6965 2100 85 250
30 105 18 28 295 84 810 840
1172
985
MAX 8355 2940 127 375 45 157
36 56 442 168 1620 1680
1758
1970
UNIT pF
nC ns
µJ
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol Characteristic / Test Conditions
MIN TYP MAX UNIT
IS
Continuous Source Current (B.