APT50M65B2LLG

APT50M65B2LL APT50M65LLL 500V 67A 0.065Ω POWER MOS 7 R MOSFET B2LL Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses and Q are addressed . Power MOS with Power MOS 7® by significantly lowering 7® combines lower conduction and switching RDS(ON) losses g along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. Lower Input Capacitance Lower Miller Capacitance Lower Gate Charge, Qg Increased Power Dissipation Easier To Drive Popular T-MAX™ or TO-264 Package T-MaxTM TO-264 LLL D G S MAXIMUM RATINGS Symbol Parameter All Ratings: TC = 25°C unless otherwise specified. APT50M65B2LL_LLL UNIT VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 (Repetitive and Non-Repetitive) Repetitive Avalanche Energy 1 Single Pulse Avalanche Energy 4 500 67 268 ±30 ±40 694 5.5 -55 to 150 300 67 50 3000 Volts Amps Volts Watts W/°C °C Amps mJ STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX BVDSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) 500 RDS(on) Drain-Source On-State Resistance ...