isc N-Channel MOSFET Transistor
FEATURES ·Drain Current –ID=53A@ TC=25℃ ·Drain Source Voltage-
: VDSS=600V(Min) ·Static...
isc N-Channel MOSFET
Transistor
FEATURES ·Drain Current –ID=53A@ TC=25℃ ·Drain Source Voltage-
: VDSS=600V(Min) ·Static Drain-Source On-Resistance
: RDS(on) =0.07Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
DESCRIPTION ·Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
600
V
VGS
Gate-Source Voltage-Continuous
±20
V
ID
Drain Current-Continuous
53
A
IDM
Drain Current-Single Pluse
159
A
PD
Total Dissipation @TC=25℃
417
W
TJ
Max. Operating Junction Temperature -55~150 ℃
Tstg
Storage Temperature
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT
0.3
℃/W
APT53N60BC6
isc website：www.iscsemi.com
1 isc & iscsemi is registered trademark
isc N-Channel MOSFET
Transistor
APT53N60BC6
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID= 0.25mA
VGS(th) Gate Threshold Voltage
VDS= VGS; ID= 1.72mA
RDS(on) Drain-Source On-Resistance
VGS= 10V; ID=25.8A
IGSS
Gate-Body Leakage Current
IDSS
Zero Gate Voltage Drain Current
VSD
Forward On-Voltage
VGS= ±20V;VDS= 0
VDS= 600V; VGS= 0 VDS= 600V; VGS= 0@TJ=125℃
IS=-53A; VGS= 0
MIN MAX UNIT
600
V
2.5
3.5
V
0.07
Ω
±100 nA
25 250
μA
1.2
V
NOTICE： ISC reserves th...
