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APT56F60B2 Dataheets PDF



Part Number APT56F60B2
Manufacturers INCHANGE
Logo INCHANGE
Description N-Channel MOSFET
Datasheet APT56F60B2 DatasheetAPT56F60B2 Datasheet (PDF)

isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 60A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Resistance : RDS(on) =0.11Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage.

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isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 60A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Resistance : RDS(on) =0.11Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 60 A IDM Drain Current-Single Pluse 210 A PD Total Dissipation @TC=25℃ 1040 W TJ Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 0.12 ℃/W APT56F60B2 isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor APT56F60B2 ELECTRICAL CHARACTERISTICS TJ=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 0.25mA VGS(th) Gate Threshold Voltage VDS= VGS; ID= 2.5mA RDS(on) Drain-Source On-Resistance VGS= 10V; ID=28A IGSS Gate-Body Leakage Current IDSS Zero Gate Voltage Drain Current VSD Forward On-Voltage VGS= ±30V;VDS= 0 VDS= 600V; VGS= 0 VDS= 600V; VGS= 0@TJ=125℃ IS=-28A; VGS= 0 MIN MAX UNIT 600 V 2.5 5 V 0.11 Ω ±100 nA 250 1000 μA 1.0 V NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field. Please contact us if you intend our products to be used in these special applications. ISC makes no warranty or guarantee regarding the suitability of its products for any particular purpose, nor does ISC assume any liability arising from the application or use of any products, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. isc website:www.iscsemi.com 2 isc & iscsemi is registered trademark .


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