MOSFET
600V 60A 0.045Ω APT60N60BCS APT60N60SCS APT60N60BCSG* APT60N60SCSG*
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
...
Description
600V 60A 0.045Ω APT60N60BCS APT60N60SCS APT60N60BCSG* APT60N60SCSG*
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
COOL MOS
Po we r Se miconduc tors
Super Junction MOSFET
Ultra Low RDS(ON) Low Miller Capacitance
Ultra Low Gate Charge, Qg Avalanche Energy Rated Extreme dv/dt Rated Popular TO-247 or Surface Mount D3 Package
(B)
TO-247
D3PAK (S)
D G
S
MAXIMUM RATINGS
Symbol Parameter
VDSS ID
IDM VGS PD
Drain-Source Voltage Continuous Drain Current @ TC = 25°C Continuous Drain Current @ TC = 100°C Pulsed Drain Current 1
Gate-Source Voltage Continuous Total Power Dissipation @ TC = 25°C Linear Derating Factor
TJ,TSTG TL
dv/dt IAR EAR EAS
Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec.
MOSFET dv/dt Ruggedness (VDS = 480V) Avalanche Current 2 Repetitive Avalanche Energy 2 Single Pulse Avalanche Energy 3
All Ratings: TC = 25°C unless otherwise specified. APT60N60B_SCS(G) UNIT
600
Volts
60
38
Amps
230
±30
Volts
431
Watts
3.45
W/°C
-55 to 150 °C
260
50
V/ns
11
Amps
3
mJ
1950
STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions
MIN TYP MAX UNIT
V(BR)DSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250μA)
600
RDS(on) Drain-Source On-State Resistance 4 (VGS = 10V, ID = 44A)
IDSS
Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V)
Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V, TC = 150°C)
IGSS Gate-Source Leakage Current (VGS = ±20V, VDS = 0V)
0.045 2...
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