APT60N60BCSG

600V 60A 0.045Ω APT60N60BCS APT60N60SCS APT60N60BCSG* APT60N60SCSG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. COOL MOS Po we r Se miconduc tors Super Junction MOSFET Ultra Low RDS(ON) Low Miller Capacitance Ultra Low Gate Charge, Qg Avalanche Energy Rated Extreme dv/dt Rated Popular TO-247 or Surface Mount D3 Package (B) TO-247 D3PAK (S) D G S MAXIMUM RATINGS Symbol Parameter VDSS ID IDM VGS PD Drain-Source Voltage Continuous Drain Current @ TC = 25°C Continuous Drain Current @ TC = 100°C Pulsed Drain Current 1 Gate-Source Voltage Continuous Total Power Dissipation @ TC = 25°C Linear Derating Factor TJ,TSTG TL dv/dt IAR EAR EAS Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. MOSFET dv/dt Ruggedness (VDS = 480V) Avalanche Current 2 Repetitive Avalanche Energy 2 Single Pulse Avalanche Energy 3 All Ratings: TC = 25°C unless otherwise specified. APT60N60B_SCS(G) UNIT 600 Volts 60 38 Amps 230 ±30 Volts 431 Watts 3.45 W/°C -55 to 150 °C 260 50 V/ns 11 Amps 3 mJ 1950 STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250μA) 600 RDS(on) Drain-Source On-State Resistance 4 (VGS = 10V, ID = 44A) IDSS Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V, TC = 150°C) IGSS Gate-Source Leakage Current (VGS = ±20V, VDS = 0V) 0.045 2...