Power MOSFET
APT5015BVFR APT5015SVFR
500V 32A 0.150Ω
POWER MOS V ® FREDFET
Power MOS V® is a new generation of high voltage N-Channe...
Description
APT5015BVFR APT5015SVFR
500V 32A 0.150Ω
POWER MOS V ® FREDFET
Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.
BVFR
TO-247
D3PAK SVFR
Faster Switching
Avalanche Energy Rated
D
Lower Leakage
TO-247 or Surface Mount D3PAK Package
Fast Recovery Body Diode
G S
MAXIMUM RATINGS
All Ratings: TC = 25°C unless otherwise specified.
Symbol VDSS ID IDM VGS VGSM
PD
TJ,TSTG TL IAR EAR EAS
Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 (Repetitive and Non-Repetitive) Repetitive Avalanche Energy 1 Single Pulse Avalanche Energy 4
APT5015BVFR_SVFR 500 32 128 ±30 ±40 370 2.96
-55 to 150 300 30 30 1300
UNIT Volts Amps
Volts Watts W/°C
°C Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX
BVDSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
500
ID(on) On State Drain Current 2 (VDS > ID(on) x RDS(on) Max, VGS = 10V)
32
RDS(on) Drain-Source On-State Resistance 2 (VGS = 10V, 0.5 ID[Cont.])
IDSS
Zero Gate Voltage Drai...
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