JSR2907

2N2907AHR Datasheet Rad-hard 60 V, 0.6 A PNP transistor 3 1 2 LCC-3 3 4 1 2 UB Pin 4 in UB is connected to the metallic lid. C (3) (2) B E (1) DS10460 Product status link 2N2907AHR Features VCBO IC(max.) 60 V ESCC JANS 0.5 A 0.6 A Hermetic packages ESCC and JANS qualified Up to 100 krad(Si) low dose rate HFE at 10 V, 150 mA > 100 Tj(max.) 200 °C Description The 2N2907AHR is a silicon planar PNP transistor specifically designed and housed in hermetic packages for aerospace and Hi-Rel applications. It is available in the JAN qualification system (MIL-PRF19500 compliance) and in the ESCC qualification system (ESCC 5000 compliance). In case of discrepancies between this datasheet and the relevant agency specification, the latter takes precedence. Product summary Part-number JANSR2N2907AUBx JANS2N2907AUBx 2N2907ARUBx 2N2907AUBx SOC2907ARHRx SOC2907AHRx Product summary Qualification system Agency specification JANSR MIL-PRF-19500/291 JANS MIL-PRF-19500/291 ESCC Flight 5202/001 ESCC Flight 5202/001 ESCC Flight 5202/001 ESCC Flight 5202/001 Note: See Table 9 for ordering information. Package UB UB UB UB LCC-3 LCC-3 Radiation level 100 krad - 100 krad - 100 krad - DS6095 - Rev 12 - February 2021 For further information contact your local STMicroelectronics sales office. www.st.com 1 Note: Electrical ratings For PNP transistor voltage and current polarity is reversed. Table 1. Absolute maximum ratings Symbol VCBO VCEO VEBO Collector-...