Power Transistors
2SC3738
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching For ...
Power
Transistors
2SC3738
Silicon
NPN triple diffusion planar type
For high breakdown voltage high-speed switching For horizontal deflection output
s Features
20.0±0.5
Unit: mm
φ 3.3±0.2 5.0±0.3
3.0
3.0
2.0 4.0
10.0 6.0
q High-speed switching
q Wide area of safe operation (ASO) with high breakdown voltage
q Satisfactory linearity of foward current transfer ratio hFE
26.0±0.5
1.5
/ s Absolute Maximum Ratings (TC=25˚C)
2.0±0.3
1.5
Parameter
Symbol
Ratings
Unit
e e) Collector to base voltage
VCBO
20.0±0.5 2.5
Solder Dip
1.5
2.0
1200
V
c typ Collector to emitter voltage VCEO
800
V
n d stage. tinued Emitter to base voltage
VEBO
7
V
le on Peak collector current
ICP
15
A
a elifecyc disc Collector current
IC
10
A
n u ct ped, Base current
IB
5
A
rodu d ty Collector power TC=25°C
te tin urP tinue dissipation
Ta=25°C
PC
175 W
3.5
g fo con Junction temperature
in n llowin d dis Storage temperature
Tj
150
˚C
Tstg
–55 to +150
˚C
a o s cludes fpoe, plane Electrical Characteristics (TC=25˚C)
c ed in ce ty Parameter
Symbol
Conditions
tinu nan Collector cutoff current
M is iscon ainte Emitter cutoff current
/D , m Collector to emitter voltage
D ance type Forward current transfer ratio
inten nce Collector to emitter saturation voltage Ma tena Base to emitter saturation voltage main Transition frequency ned Turn-on time (pla Storage time
ICBO IEBO VCEO hFE VCE(sat) VBE(sat) fT ton tstg
VCB = 1000V, IE = 0 VEB = 6V, IC = 0 IC = 10mA, ...
