Transistors
This product complies with the RoHS Directive (EU 2002/95/EC).
2SC3929
Silicon NPN epitaxial planar type
...
Transistors
This product complies with the RoHS Directive (EU 2002/95/EC).
2SC3929
Silicon
NPN epitaxial planar type
For low-frequency output amplification Complementary to 2SA1531
Features
Package
Low noise voltage NV
Code
High forward current transfer ratio hFE S-Mini type package, allowing downsizing of the equipment and automatic
insertion through the tape packing.
SMini3-G1 Pin Name
1. Base
/ Absolute Maximum Ratings Ta = 25°C
2. Emitter 3. Collector
Parameter
Symbol Rating
Unit
e ) Collector-base voltage (Emitter open) c type Collector-emitter voltage (Base open) n d tage. ued Emitter-base voltage (Collector open)
le s ontin Collector current
a elifecyc disc Peak collector current n u t ed, Collector power dissipation
roduc d typ Junction temperature
te tin ur P tinue Storagetemperature
VCBO
35
V
VCEO
35
V
VEBO
5
V
IC
50
mA
ICP
100
mA
PC
150
mW
Tj
150
°C
Tstg –55 to +150 °C
Marking Symbol: S
in n followingefdodiscon Electrical Characteristics Ta = 25°C±3°C
es plan Parameter
Symbol
Conditions
a o includ type, Collector-base voltage (Emitter open)
VCBO IC = 10 mA, IE = 0
c ed ce Collector-emitter voltage (Base open) M is ntinu tenan Emitter-base voltage (Collector open)
isco ain Base-emitter voltage e/D e, m Collector-base cutoff current (Emitter open)
D anc typ Collector-emitter cutoff current (Base open)
inten ance Forward current transfer ratio * Ma inten Collector-emitter saturation voltage ma Transition ...