C3930

Transistors 2SC3930 Silicon NPN epitaxial planar type (0.425) For high-frequency amplification Complementary to 2SA1532 0.3+–00..01 Unit: mm 0.15+–00..0150 3 1.25±0.10 2.1±0.1 5˚ ■ Features Optimum for RF amplification of FM/AM radios 0.2±0.1 High transition frequency fT S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing / ■ Absolute Maximum Ratings Ta = 25°C 1 2 (0.65) (0.65) 1.3±0.1 2.0±0.2 10˚ e Parameter Symbol Rating Unit c type) Collector-base voltage (Emitter open) VCBO 30 0 to 0.1 0.9±0.1 0.9–+00..12 V n d ge. ed Collector-emitter voltage (Base open) VCEO 20 V sta tinu Emitter-base voltage (Collector open) VEBO 5 V a e cycle iscon Collector current IC 30 mA life d, d Collector power dissipation PC 150 mW n u duct type Junction temperature Tj 150 °C te tin Pro ued Storage temperature Tstg −55 to +150 °C Marking Symbol: V 1: Base 2: Emitter 3:Collector EIAJ: SC-70 SMini3-G1 Package in n es follopwlianngefdoudriscontin ■ Electrical Characteristics Ta = 25°C ± 3°C a o clud pe, Parameter Symbol Conditions Min Typ Max Unit c ed in ce ty Collector-base cutoff current (Emitter open) ICBO VCB = 10 V, IE = 0 0.1 µA tinu nan Forward current transfer ratio * hFE VCB = 10 V, IE = −1 mA 70 220  M is iscon ainte Transition frequency fT VCB = 10 V, IE = −1 mA, f = 200 MHz 150 250 MHz e/D e, m Noise figure NF VCB = 10 V, IE = −1 mA, f = 5 MHz 2.8 4.0 dB D anc...