C3932

Transistors 2SC3932 Silicon NPN epitaxial planar type For high-frequency amplification/oscillation/mixing 0.3+–00..01 Unit: mm 0.15+–00..0150 (0.425) ■ Features 3 High transition frequency fT S-Mini type package, allowing downsizing of the equipment 1.25±0.10 2.1±0.1 5˚ and automatic insertion through the tape packing 1 2 0.2±0.1 (0.65) (0.65) 1.3±0.1 / ■ Absolute Maximum Ratings Ta = 25°C 2.0±0.2 Parameter Symbol Rating Unit e pe) Collector-base voltage (Emitter open) VCBO 30 V c e. d ty Collector-emitter voltage (Base open) VCEO 20 V n d stag tinue Emitter-base voltage (Collector open) VEBO 3 0 to 0.1 0.9±0.1 0.9–+00..12 V a e cle con Collector current IC 50 mA lifecy , dis Collector power dissipation PC 150 mW n u duct typed Junction temperature Tj 150 °C te tin Pro ed Storage temperature Tstg −55 to +150 °C 10˚ Marking Symbol: R 1: Base 2: Emitter 3: Collector JEITA: SC-70 SMini3-G1 Package in n s followlianngefdoudriscontinu ■ Electrical Characteristics Ta = 25°C ± 3°C a o lude e, p Parameter Symbol Conditions Min Typ Max Unit inc typ Collector-base voltage (Emitter open) c tinued ance Emitter-base voltage (Collector open) M is con inten Base-emitter voltage /Dis ma Forward current transfer ratio D ance type, Transition frequency * ten ce Reverse transfer capacitance ain nan (Common base) VCBO VEBO VBE hFE fT Crb IC = 100 µA, IE = 0 30 IE = 10 µA, IC = 0 3 VCB = 10 V, IE = −2 mA VCB = 10 V, IE = −2 mA 25 VC...