APT5024SLLG

APT5024BLL(G) APT5024SLL(G) 500V 22A 0.240Ω *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS 7 R MOSFET BLL Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed and Qg. Power MOS with Power MOS 7® by significantly lowering 7® combines lower conduction and switching RDS(ON) losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. TO-247 Lower Input Capacitance Lower Miller Capacitance Lower Gate Charge, Qg Increased Power Dissipation Easier To Drive TO-247 or Surface Mount D3PAK Package D3PAK SLL D G S MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified. Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 (Repetitive and Non-Repetitive) Repetitive Avalanche Energy 1 Single Pulse Avalanche Energy 4 APT5024BLL_SLL(G) UNIT 500 Volts 22 Amps 88 ±30 Volts ±40 265 Watts 2.12 W/°C -55 to 150 °C 300 22 Amps 30 mJ 960 STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX BVDSS Drain-Source Breakdown Voltage (VGS = ...