APT6010B2FLL

600V 54A 0.100Ω APT6010B2FLL APT6010LFLL APT6010B2FLL* APT6010LFLLG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS 7 R FREDFET B2FLL Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed and Qg. Power MOS with Power MOS 7® by significantly lowering 7® combines lower conduction and switching RDS(ON) losses along with exceptionally fast switching speeds inherent with Microsemi's patented metal gate structure. T-MAX™ TO-264 LFLL Lower Input Capacitance Lower Miller Capacitance Lower Gate Charge, Qg Increased Power Dissipation Easier To Drive Popular T-MAX™ or TO-264 Package FAST RECOVERY BODY DIODE D G S MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified. Symbol Parameter APT6010B2_LFLL UNIT VDSS ID IDM VGS VGSM Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 Gate-Source Voltage Continuous Gate-Source Voltage Transient 600 Volts 54 Amps 216 ±30 Volts ±40 PD Total Power Dissipation @ TC = 25°C Linear Derating Factor 690 5.52 Watts W/°C TJ,TSTG TL IAR EAR EAS Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 (Repetitive and Non-Repetitive) Repetitive Avalanche Energy 1 Single Pulse Avalanche Energy 4 -55 to 150 300 54 50 3000 °C Amps mJ STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditio...