Document
APT6015B2VFR APT6015LVFR
600V 38A 0.150Ω
POWER MOS V® FREDFET B2VFR
Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.
T-MAX™
TO-264
LVFR
• Fast Recovery Body Diode • Lower Leakage • Faster Switching MAXIMUM RATINGS
• Avalanche Energy Rated • T-MAX™ or TO-264 Package
D G
S All Ratings: TC = 25°C unless otherwise specified.
Symbol VDSS ID IDM VGS VGSM
PD
TJ,TSTG TL IAR EAR EAS
Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 (Repetitive and Non-Repetitive) Repetitive Avalanche Energy 1 Single Pulse Avalanche Energy 4
APT6015B2VFR_LVFR 600 38 152 ±30 ±40 520 4.16
-55 to 150 300 38 50 2500
UNIT Volts Amps
Volts Watts W/°C
°C Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX
BVDSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
600
ID(on) On State Drain Current 2 (VDS > ID(on) x RDS(on) Max, VGS = 10V)
38
RDS(on) Drain-Source On-State Resistance 2 (VGS = 10V, 0.5 ID[Cont.])
IDSS
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C)
IGSS Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
VGS(th) Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
2
0.150 250 1000 ±100
4
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
UNIT Volts Amps Ohms
µA
nA Volts
050-5945 Rev A 6-2004
DYNAMIC CHARACTERISTICS
Symbol Ciss Coss Crss Qg Qgs Qgd t d(on) tr t d(off) tf
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time
Test Conditions
VGS = 0V VDS = 25V f = 1 MHz
VGS = 10V VDD = 0.5 VDSS ID = ID [Cont.] @ 25°C
VGS = 15V VDD = 0.5 VDSS ID = ID [Cont.] @ 25°C
RG = 0.6Ω
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol IS ISM VSD dv/dt trr
Qrr
IRRM
Characteristic / Test Conditions
Continuous Source Current (Body Diode) Pulsed Source Current 1 (Body Diode) Diode Forward Voltage 2 (VGS = 0V, IS = -ID [Cont.]) Peak Diode Recovery dv/dt 5 Reverse Recovery Time (IS = -ID [Cont.], di/dt = 100A/µs)
Reverse Recovery Charge (IS = -ID [Cont.], di/dt = 100A/µs)
Peak Recovery Current (IS = -ID [Cont.], di/dt = 100A/µs)
Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C
APT6015B2VFR_LVFR
MIN TYP MAX UNIT 7500 9000
900 1260 pF
320 480
315 475
45
70
nC
125 190
15
30
13
26
ns
45
70
5
10
MIN TYP MAX UNIT
38 Amps
152
1.3 Volts
5
V/ns
250 ns
500
1.6 µC
5.5
15 Amps
27
THERMAL CHARACTERISTICS
Symbol Characteristic
RθJC Junction to Case RθJA Junction to Ambient 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
MIN TYP MAX UNIT
0.24 40
°C/W
3 See MIL-STD-750 Method 3471
4 Starting Tj = +25°C, L = 3.46mH, RG = 25Ω, Peak IL = 38A 5 IS ≤ ID [Cont.], di/dt = 100A/µs, Tj ≤ 150°C, RG = 2.0Ω, VR = 200V.
APT Reserves the right to change, without notice, the specifications and information contained herein.
050-5945 Rev A 6-2004 ZθJC, THERMAL IMPEDANCE (°C/W) PDM
0.3
D=0.5 0.1
0.2 0.05
0.1
0.01 0.005
0.05
0.02 0.01
SINGLE PULSE
Note:
t1
t2 Duty Factor D = t1/t2 Peak TJ = PDM x ZθJC + TC
0.001
10-5
10-4
10-3
10-2
10-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED)
ID, DRAIN CURRENT (AMPERES)
ID, DRAIN CURRENT (AMPERES)
ID, DRAIN CURRENT (AMPERES)
100 VGS=6V, 7V, 10V & 15V
5.5V 80
60 5V
40 4.5V
20 4V
00
50 100 150 200 250 300
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS
100 TJ = -55°C
TJ = +25°C 80
TJ = +125°C
VDS> ID (ON) x RDS (ON)MAX.
60
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
40
20
TJ = +125°C
TJ = +25°C
TJ = -55°C
00
2
4
6
8
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS
40
30
20
10
0
25
50
75
100 125 150
TC, CASE TEMPERATURE (°C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
2.5
ID = 0.5 ID [Cont.] VGS = 10V
2.0
1.5
1.0
0.5
0.0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
VGS(TH), THRESHOLD VOLTAGE (NORMALIZED)
BVDSS, DRAIN-TO-SOURCE BREAKD.