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APT6015B2VFR Dataheets PDF



Part Number APT6015B2VFR
Manufacturers Advanced Power Technology
Logo Advanced Power Technology
Description Power MOSFET
Datasheet APT6015B2VFR DatasheetAPT6015B2VFR Datasheet (PDF)

APT6015B2VFR APT6015LVFR 600V 38A 0.150Ω POWER MOS V® FREDFET B2VFR Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. T-MAX™ TO-264 LVFR • Fast Recovery Body Diode • Lower Leakage • Faster Switching MAXIMUM RATINGS • Avalanche Energy Rated • T-MAX™ or TO-264 Package.

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APT6015B2VFR APT6015LVFR 600V 38A 0.150Ω POWER MOS V® FREDFET B2VFR Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. T-MAX™ TO-264 LVFR • Fast Recovery Body Diode • Lower Leakage • Faster Switching MAXIMUM RATINGS • Avalanche Energy Rated • T-MAX™ or TO-264 Package D G S All Ratings: TC = 25°C unless otherwise specified. Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 (Repetitive and Non-Repetitive) Repetitive Avalanche Energy 1 Single Pulse Avalanche Energy 4 APT6015B2VFR_LVFR 600 38 152 ±30 ±40 520 4.16 -55 to 150 300 38 50 2500 UNIT Volts Amps Volts Watts W/°C °C Amps mJ STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX BVDSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) 600 ID(on) On State Drain Current 2 (VDS > ID(on) x RDS(on) Max, VGS = 10V) 38 RDS(on) Drain-Source On-State Resistance 2 (VGS = 10V, 0.5 ID[Cont.]) IDSS Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C) IGSS Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) VGS(th) Gate Threshold Voltage (VDS = VGS, ID = 2.5mA) 2 0.150 250 1000 ±100 4 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com UNIT Volts Amps Ohms µA nA Volts 050-5945 Rev A 6-2004 DYNAMIC CHARACTERISTICS Symbol Ciss Coss Crss Qg Qgs Qgd t d(on) tr t d(off) tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 0.5 VDSS ID = ID [Cont.] @ 25°C VGS = 15V VDD = 0.5 VDSS ID = ID [Cont.] @ 25°C RG = 0.6Ω SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol IS ISM VSD dv/dt trr Qrr IRRM Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current 1 (Body Diode) Diode Forward Voltage 2 (VGS = 0V, IS = -ID [Cont.]) Peak Diode Recovery dv/dt 5 Reverse Recovery Time (IS = -ID [Cont.], di/dt = 100A/µs) Reverse Recovery Charge (IS = -ID [Cont.], di/dt = 100A/µs) Peak Recovery Current (IS = -ID [Cont.], di/dt = 100A/µs) Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C APT6015B2VFR_LVFR MIN TYP MAX UNIT 7500 9000 900 1260 pF 320 480 315 475 45 70 nC 125 190 15 30 13 26 ns 45 70 5 10 MIN TYP MAX UNIT 38 Amps 152 1.3 Volts 5 V/ns 250 ns 500 1.6 µC 5.5 15 Amps 27 THERMAL CHARACTERISTICS Symbol Characteristic RθJC Junction to Case RθJA Junction to Ambient 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2% MIN TYP MAX UNIT 0.24 40 °C/W 3 See MIL-STD-750 Method 3471 4 Starting Tj = +25°C, L = 3.46mH, RG = 25Ω, Peak IL = 38A 5 IS ≤ ID [Cont.], di/dt = 100A/µs, Tj ≤ 150°C, RG = 2.0Ω, VR = 200V. APT Reserves the right to change, without notice, the specifications and information contained herein. 050-5945 Rev A 6-2004 ZθJC, THERMAL IMPEDANCE (°C/W) PDM 0.3 D=0.5 0.1 0.2 0.05 0.1 0.01 0.005 0.05 0.02 0.01 SINGLE PULSE Note: t1 t2 Duty Factor D = t1/t2 Peak TJ = PDM x ZθJC + TC 0.001 10-5 10-4 10-3 10-2 10-1 1.0 10 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) ID, DRAIN CURRENT (AMPERES) ID, DRAIN CURRENT (AMPERES) ID, DRAIN CURRENT (AMPERES) 100 VGS=6V, 7V, 10V & 15V 5.5V 80 60 5V 40 4.5V 20 4V 00 50 100 150 200 250 300 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS 100 TJ = -55°C TJ = +25°C 80 TJ = +125°C VDS> ID (ON) x RDS (ON)MAX. 60 250µSEC. PULSE TEST @ <0.5 % DUTY CYCLE 40 20 TJ = +125°C TJ = +25°C TJ = -55°C 00 2 4 6 8 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS 40 30 20 10 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE 2.5 ID = 0.5 ID [Cont.] VGS = 10V 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE VGS(TH), THRESHOLD VOLTAGE (NORMALIZED) BVDSS, DRAIN-TO-SOURCE BREAKD.


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