isc N-Channel MOSFET Transistor
FEATURES ·Drain Current –ID=20A@ TC=25℃ ·Drain Source Voltage-
: VDSS=800V(Min) ·Static...
isc N-Channel MOSFET
Transistor
FEATURES ·Drain Current –ID=20A@ TC=25℃ ·Drain Source Voltage-
: VDSS=800V(Min) ·Static Drain-Source On-Resistance
: RDS(on) =0.43Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
DESCRIPTION ·Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
800
V
VGS
Gate-Source Voltage-Continuous
±30
V
ID
Drain Current-Continuous
20
A
IDM
Drain Current-Single Pluse
80
A
PD
Total Dissipation @TC=25℃
400
W
TJ
Max. Operating Junction Temperature -55~150 ℃
Tstg
Storage Temperature
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT 0.31 ℃/W
APT8043BLL
isc website：www.iscsemi.com
1 isc & iscsemi is registered trademark
isc N-Channel MOSFET
Transistor
APT8043BLL
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID= 0.25mA
VGS(th) Gate Threshold Voltage
VDS= VGS; ID= 1mA
RDS(on) Drain-Source On-Resistance
VGS= 10V; ID=10A
IGSS
Gate-Body Leakage Current
IDSS
Zero Gate Voltage Drain Current
VSD
Forward On-Voltage
VGS= ±30V;VDS= 0
VDS= 800V; VGS= 0 VDS= 640V; VGS= 0@TJ=125℃
IS=-20A; VGS= 0
MIN MAX UNIT
800
V
3
5
V
0.43
Ω
±100 nA
100 500
μA
1.3
V
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