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R6004ENJ Dataheets PDF



Part Number R6004ENJ
Manufacturers ROHM
Logo ROHM
Description Power MOSFET
Datasheet R6004ENJ DatasheetR6004ENJ Datasheet (PDF)

R6004ENJ   Nch 600V 4A Power MOSFET    Datasheet lOutline VDSS 600V TO-263S   RDS(on)(Max.) 0.98Ω SC-83 ID ±4.0A LPT(S) PD lFeatures 58W          lInner circuit 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to   be ±20V. 4) Drive circuits can be simple. 5) Parallel use is easy. 6) Pb-free lead plating ; RoHS compliant lPackaging specifications Packing Embossed Tape Reel size (mm) 330 lApplication Switching Type Tape width (mm) Quant.

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R6004ENJ   Nch 600V 4A Power MOSFET    Datasheet lOutline VDSS 600V TO-263S   RDS(on)(Max.) 0.98Ω SC-83 ID ±4.0A LPT(S) PD lFeatures 58W          lInner circuit 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to   be ±20V. 4) Drive circuits can be simple. 5) Parallel use is easy. 6) Pb-free lead plating ; RoHS compliant lPackaging specifications Packing Embossed Tape Reel size (mm) 330 lApplication Switching Type Tape width (mm) Quantity (pcs) 24 1000 Taping code TL Marking lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) Parameter Symbol Value R6004ENJ Unit Drain - Source voltage Continuous drain current Pulsed drain current TC = 25°C TC = 100°C VDSS ID*1 ID*1 IDP*2 600 V ±4.0 A ±2.2 A ±8.0 A Gate - Source voltage Static AC(f>1Hz) VGSS ±20 V ±30 V Avalanche current, repetitive IAR 0.8 A Avalanche energy, single pulse EAS*3 46 mJ Avalanche energy, repetitive EAR*3 0.13 mJ Power dissipation (TC = 25°C) PD*4 58 W Junction temperature Tj 150 ℃ Operating junction and storage temperature range Tstg -55~+150 ℃                                                                                          www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. 1/12 20190527 - Rev.003     R6004ENJ            lAbsolute maximum ratings (Ta = 25°C) Parameter Reverse diode dv/dt Drain - Source voltage slope                 Datasheet Symbol dv/dt Conditions - Values Unit 15 V/ns dv/dt VDS = 480V, Tj = 25℃ 50 V/ns lThermal resistance Parameter Thermal resistance, junction - case Thermal resistance, junction - ambient Soldering temperature, wavesoldering for 10s Symbol RthJC RthJA*5 Tsold Values Unit Min. Typ. Max. - - 2.2 ℃/W - - 80 ℃/W - - 265 ℃ lElectrical characteristics (Ta = 25°C) Parameter Symbol Conditions Drain - Source breakdown voltage V(BR)DSS VGS = 0V, ID = 1mA Zero gate voltage drain current Gate - Source leakage current Gate threshold voltage Static drain - source on - state resistance Gate resistance VDS = 600V, VGS = 0V IDSS Tj = 25°C Tj = 125°C IGSS VGS = ±20V, VDS = 0V VGS(th) VDS = 10V, ID = 1mA VGS = 10V, ID = 1.5A RDS(on)*6 Tj = 25°C Tj = 125°C RG f =1MHz, open drain Values Unit Min. Typ. Max. 600 - - V       - 0.1 100 μA - - 1000 - - ±100 nA 2 - 4V       - 0.90 0.98 Ω - 1.36 - - 16.7 - Ω                                               www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. 2/12                                            20190527 - Rev.003 R6004ENJ        lElectrical characteristics (Ta = 25°C) Parameter Symbol Conditions Forward Transfer Admittance Input capacitance Output capacitance Reverse transfer capacitance Effective output capacitance, energy related Effective output capacitance, time related Turn - on delay time Rise time Turn - off delay time Fall time |Yfs|*6 VDS = 10V, ID = 2A Ciss Coss Crss Co(er) VGS = 0V VDS = 25V f = 1MHz   VGS = 0V VDS = 0V to 480V Co(tr)   td(on)*6 tr*6 td(off)*6 tf*6 VDD ⋍ 300V,VGS = 10V ID = 2A RL ⋍ 150Ω RG = 10Ω          Datasheet Values Unit Min. Typ. Max. 1.5 3.0 - S - 250 - - 250 - pF - 30 - - 14 - pF - 57 - - 22 - - 22 - ns - 55 - - 40 - lGate charge characteristics (Ta = 25°C) Parameter Symbol Conditions Total gate charge Gate - Source charge Gate - Drain charge Gate plateau voltage Qg*6 Qgs*6 Qgd*6 VDD ⋍ 300V, ID = 4A, VGS = 10V V(plateau) VDD = 300V, ID = 4A Values Unit Min. Typ. Max. - 15 - - 2.5 - nC - 10 - - 6.5 - V *1 Limited only by maximum channel temperature allowed. *2 Pw ≤ 10μs, Duty cycle ≤ 1% *3 L≒100mH, VDD=50V, RG=25Ω, STARTING Tj=25℃ *4 TC=25℃ *5 Mounted on a epoxy PCB FR4 (25mm x 27mm x 0.8mm) *6 Pulsed                                                                                            www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. 3/12 20190527 - Rev.003 R6004ENJ                        Datasheet lBody diode electrical characteristics (Source-Drain) (Ta = 25°C) Parameter Symbol Conditions Values Unit Min. Typ. Max. Continuous forward current Pulse forward current IS*1 Tc = 25℃ ISP*2 - - 4.0 A - - 8.0 A Forward voltage Reverse recovery time Reverse recovery charge Peak reverse recovery current VSD*6 trr*6 Qrr*6 Imm*6 VGS = 0V, IS = 4A IS = 4A, VGS=0V di/dt = 100A/μs - - 1.5 V - 320 - ns - 2.4 - μC - 15 - A lTypical Transient Thermal Characteristics Symbol Value .


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