Document
R6004ENJ
Nch 600V 4A Power MOSFET
Datasheet
lOutline
VDSS
600V
TO-263S
RDS(on)(Max.)
0.98Ω
SC-83
ID
±4.0A
LPT(S)
PD
lFeatures
58W
lInner circuit
1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be ±20V. 4) Drive circuits can be simple. 5) Parallel use is easy. 6) Pb-free lead plating ; RoHS compliant
lPackaging specifications Packing
Embossed Tape
Reel size (mm)
330
lApplication Switching
Type Tape width (mm) Quantity (pcs)
24 1000
Taping code
TL
Marking
lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified)
Parameter
Symbol
Value
R6004ENJ Unit
Drain - Source voltage Continuous drain current Pulsed drain current
TC = 25°C TC = 100°C
VDSS ID*1 ID*1 IDP*2
600
V
±4.0
A
±2.2
A
±8.0
A
Gate - Source voltage
Static
AC(f>1Hz)
VGSS
±20
V
±30
V
Avalanche current, repetitive
IAR
0.8
A
Avalanche energy, single pulse
EAS*3
46
mJ
Avalanche energy, repetitive
EAR*3
0.13
mJ
Power dissipation (TC = 25°C)
PD*4
58
W
Junction temperature
Tj
150
℃
Operating junction and storage temperature range
Tstg
-55~+150
℃
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© 2019 ROHM Co., Ltd. All rights reserved.
1/12
20190527 - Rev.003
R6004ENJ
lAbsolute maximum ratings (Ta = 25°C) Parameter
Reverse diode dv/dt
Drain - Source voltage slope
Datasheet
Symbol
dv/dt
Conditions -
Values Unit 15 V/ns
dv/dt VDS = 480V, Tj = 25℃ 50 V/ns
lThermal resistance
Parameter
Thermal resistance, junction - case Thermal resistance, junction - ambient Soldering temperature, wavesoldering for 10s
Symbol
RthJC RthJA*5 Tsold
Values Unit
Min. Typ. Max.
-
- 2.2 ℃/W
-
- 80 ℃/W
-
- 265 ℃
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Drain - Source breakdown voltage
V(BR)DSS VGS = 0V, ID = 1mA
Zero gate voltage drain current
Gate - Source leakage current Gate threshold voltage
Static drain - source on - state resistance
Gate resistance
VDS = 600V, VGS = 0V IDSS Tj = 25°C
Tj = 125°C IGSS VGS = ±20V, VDS = 0V VGS(th) VDS = 10V, ID = 1mA
VGS = 10V, ID = 1.5A RDS(on)*6 Tj = 25°C
Tj = 125°C RG f =1MHz, open drain
Values Unit
Min. Typ. Max.
600 -
-
V
- 0.1 100 μA
-
- 1000
-
- ±100 nA
2
-
4V
- 0.90 0.98 Ω
- 1.36 -
- 16.7 -
Ω
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© 2019 ROHM Co., Ltd. All rights reserved.
2/12
20190527 - Rev.003
R6004ENJ
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Forward Transfer Admittance
Input capacitance Output capacitance Reverse transfer capacitance
Effective output capacitance, energy related
Effective output capacitance, time related
Turn - on delay time Rise time Turn - off delay time Fall time
|Yfs|*6 VDS = 10V, ID = 2A
Ciss Coss Crss
Co(er)
VGS = 0V VDS = 25V f = 1MHz
VGS = 0V
VDS = 0V to 480V Co(tr)
td(on)*6 tr*6
td(off)*6 tf*6
VDD ⋍ 300V,VGS = 10V
ID = 2A RL ⋍ 150Ω RG = 10Ω
Datasheet
Values Unit
Min. Typ. Max.
1.5 3.0
-
S
- 250 -
- 250 -
pF
-
30
-
-
14
-
pF
-
57
-
-
22
-
-
22
-
ns
-
55
-
-
40
-
lGate charge characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Total gate charge Gate - Source charge Gate - Drain charge Gate plateau voltage
Qg*6 Qgs*6 Qgd*6
VDD ⋍ 300V, ID = 4A, VGS = 10V
V(plateau) VDD = 300V, ID = 4A
Values Unit
Min. Typ. Max.
-
15
-
-
2.5
-
nC
-
10
-
-
6.5
-
V
*1 Limited only by maximum channel temperature allowed.
*2 Pw ≤ 10μs, Duty cycle ≤ 1%
*3 L≒100mH, VDD=50V, RG=25Ω, STARTING Tj=25℃
*4 TC=25℃
*5 Mounted on a epoxy PCB FR4 (25mm x 27mm x 0.8mm)
*6 Pulsed
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© 2019 ROHM Co., Ltd. All rights reserved.
3/12
20190527 - Rev.003
R6004ENJ
Datasheet
lBody diode electrical characteristics (Source-Drain) (Ta = 25°C)
Parameter
Symbol
Conditions
Values Unit
Min. Typ. Max.
Continuous forward current
Pulse forward current
IS*1 Tc = 25℃
ISP*2
-
- 4.0 A
-
- 8.0 A
Forward voltage Reverse recovery time Reverse recovery charge Peak reverse recovery current
VSD*6 trr*6 Qrr*6 Imm*6
VGS = 0V, IS = 4A
IS = 4A, VGS=0V di/dt = 100A/μs
-
- 1.5 V
- 320 -
ns
- 2.4 - μC
- 15
-
A
lTypical Transient Thermal Characteristics
Symbol
Value
.