isc N-Channel MOSFET Transistor
R6009JNJ
FEATURES ·Drain Current –ID=9A@ TC=25℃ ·Drain Source Voltage-
: VDSS=600V(Min...
isc N-Channel MOSFET
Transistor
R6009JNJ
FEATURES ·Drain Current –ID=9A@ TC=25℃ ·Drain Source Voltage-
: VDSS=600V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 585mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
DESCRIPTION ·Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage
600
V
VGS
Gate-Source Voltage-Continuous
±30
V
ID
Drain Current-Continuous
9
A
IDM
Drain Current-Single Pluse
27
A
PD
Total Dissipation @TC=25℃
125
W
TJ
Max. Operating Junction Temperature -55~150 ℃
Tstg
Storage Temperature
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT
1.0
℃/W
isc website：www.iscsemi.com
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isc N-Channel MOSFET
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID= 1mA
VGS(th) Gate Threshold Voltage
VDS= 10V; ID=1.38mA
RDS(on) Drain-Source On-Resistance
VGS= 15V; ID=4.5A
IGSS
Gate-Body Leakage Current
VGS= ±30V;VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS= 600V; VGS= 0
VSD
Forward On-Voltage
IS= 9A; VGS= 0
R6009JNJ
MIN MAX UNIT
600
V
5.0
7.0
V
585
mΩ
±100 nA
100
μA
1.7
V
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