R6007ENJ

R6007ENJ 　　Nch 600V 7A Power MOSFET 　　 Datasheet lOutline VDSS 600V TO-263S 　 RDS(on)(Max.) 0.62Ω SC-83 ID ±7A LPT(S) PD lFeatures 78W 　 　　　　　　 lInner circuit 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to 　　be ±20V. 4) Drive circuits can be simple. 5) Parallel use is easy. 6) Pb-free lead plating ; RoHS compliant lPackaging specifications Packing Embossed Tape Reel size (mm) 330 lApplication Switching Type Tape width (mm) Quantity (pcs) 24 1000 Taping code TL Marking lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) Parameter Symbol Value R6007ENJ Unit Drain - Source voltage Continuous drain current Pulsed drain current TC = 25°C TC = 100°C VDSS ID*1 ID*1 IDP*2 600 V ±7 A ±3.8 A ±14 A Gate - Source voltage static AC(f＞1Hz) VGSS ±20 V ±30 V Avalanche current, repetitive IAR 1.3 A Avalanche energy, single pulse EAS*3 133 mJ Avalanche energy, repetitive EAR*3 0.20 mJ Power dissipation (TC = 25°C) PD*4 78 W Junction temperature Tj 150 ℃ Operating junction and storage temperature range Tstg -55～+150 ℃ 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　　 　 　 　 　 　 　 　 　 　 　 www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. 1/12 20190527 - Rev.003 　 　 R6007ENJ 　 　 　 　　 　 lAbsolute maximum ratings (Ta = 25°C) Parameter Reverse diode dv/dt Drain - Source voltage slope 　 　 　 　 　 　 　 　 Datasheet Symbol dv/dt Conditions -...