R6011ENX

R6011ENX 　　Nch 600V 11A Power MOSFET 　　 Datasheet lOutline VDSS 600V 　 RDS(on)(Max.) 0.39Ω ID ±11A TO-220FM PD 53W 　 　　　　　　 lFeatures 1) Low on-resistance 2) Fast switching 3) Drive circuits can be simple 4) Parallel use is easy 5) Pb-free plating ; RoHS compliant lInner circuit lApplication Switching lPackaging specifications Code Packing C7 G Tube C7 Tube* - (Blank) Bulk* *Package dimensions are different lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) Parameter Symbol Value Unit Drain - Source voltage Continuous drain current Pulsed drain current VDSS ID*1 IDP*2 600 V ±11 A ±22 A Gate - Source voltage static AC(f＞1Hz) VGSS ±20 V ±30 V Avalanche current, repetitive Avalanche energy, single pulse Avalanche energy, repetitive IAS EAS*3 EAS*3 1.8 A 210 mJ 0.32 mJ Power dissipation (Tc = 25°C) PD 53 W Junction temperature Tj 150 ℃ Operating junction and storage temperature range Tstg -55 to +150 ℃ 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　　 　 　 　 　 　 　 　 　 　 　 www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. 1/12 20190603 - Rev.002 　 　 R6011ENX 　 　 　 　　 　 lAbsolute maximum ratings (Ta = 25°C) Parameter Reverse diode dv/dt Drain - Source voltage slope 　 　 　 　 　 　 　 　 Datasheet Symbol dv/dt Conditions - Values Unit 15 V/ns dv/dt VDS = 480V, Tj = 25℃ 50 V/ns lThermal resistance Parameter Thermal resistance, junction - case Thermal resistance, junctio...