Power MOSFET
R6011ENX
Nch 600V 11A Power MOSFET
Datasheet
lOutline
VDSS
600V
RDS(on)(Max.)
0.39Ω
ID
±11A
TO-220FM
P...
Description
R6011ENX
Nch 600V 11A Power MOSFET
Datasheet
lOutline
VDSS
600V
RDS(on)(Max.)
0.39Ω
ID
±11A
TO-220FM
PD
53W
lFeatures
1) Low on-resistance 2) Fast switching 3) Drive circuits can be simple 4) Parallel use is easy 5) Pb-free plating ; RoHS compliant
lInner circuit
lApplication Switching
lPackaging specifications
Code
Packing
C7 G
Tube
C7
Tube*
- (Blank)
Bulk*
*Package dimensions are different
lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified)
Parameter
Symbol
Value
Unit
Drain - Source voltage Continuous drain current Pulsed drain current
VDSS ID*1 IDP*2
600
V
±11
A
±22
A
Gate - Source voltage
static
AC(f>1Hz)
VGSS
±20
V
±30
V
Avalanche current, repetitive Avalanche energy, single pulse Avalanche energy, repetitive
IAS EAS*3 EAS*3
1.8
A
210
mJ
0.32
mJ
Power dissipation (Tc = 25°C)
PD
53
W
Junction temperature
Tj
150
℃
Operating junction and storage temperature range
Tstg
-55 to +150
℃
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1/12
20190603 - Rev.002
R6011ENX
lAbsolute maximum ratings (Ta = 25°C) Parameter
Reverse diode dv/dt
Drain - Source voltage slope
Datasheet
Symbol
dv/dt
Conditions -
Values Unit 15 V/ns
dv/dt VDS = 480V, Tj = 25℃ 50 V/ns
lThermal resistance
Parameter
Thermal resistance, junction - case Thermal resistance, junctio...
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