R6015ENZ

R6015ENZ 　　Nch 600V 15A Power MOSFET 　　 Datasheet lOutline VDSS 600V 　 RDS(on)(Max.) 0.29Ω ID ±15A TO-3PF PD 120W 　 　　　　　　 lInner circuit lFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to 　　be ±20V. 4) Drive circuits can be simple. 5) Parallel use is easy. 6) Pb-free lead plating ; RoHS compliant lPackaging specifications Packing Tube Reel size (mm) - lApplication Switching Tape width (mm) - Type Quantity (pcs) 300 Taping code C17 Marking lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) Parameter Symbol Value R6015ENZ Unit Drain - Source voltage Continuous drain current Pulsed drain current Gate - Source voltage TC = 25°C TC = 100°C static AC(f＞1Hz) VDSS ID*1 ID*1 IDP*2 VGSS 600 V ±15 A ±8.1 A ±30 A ±20 V ±30 V Avalanche current, repetitive IAR 2.4 A Avalanche energy, single pulse EAS*3 284 mJ Avalanche energy, repetitive EAR*3 0.43 mJ Power dissipation (TC = 25°C) PD*4 120 W Junction temperature Tj 150 ℃ Operating junction and storage temperature range Tstg -55～+150 ℃ 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　　 　 　 　 　 　 　 　 　 　 　 www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. 1/12 20191226 - Rev.002 　 　 R6015ENZ 　 　 　 　　 　 lAbsolute maximum ratings (Ta = 25°C) Parameter Reverse diode dv/dt Drain - Source voltage slope 　 　 　 　 　 　 　 　 Datasheet Symbol dv/dt Conditions - Values Unit 1...