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R6020KNX Dataheets PDF



Part Number R6020KNX
Manufacturers ROHM
Logo ROHM
Description Power MOSFET
Datasheet R6020KNX DatasheetR6020KNX Datasheet (PDF)

R6020KNX   Nch 600V 20A Power MOSFET    Datasheet lOutline VDSS 600V   RDS(on)(Max.) 0.196Ω ID ±20A TO-220FM PD 68W          lFeatures 1) Low on-resistance 2) Ultra Fast switching 3) Parallel use is easy 4) Pb-free plating ; RoHS compliant lInner circuit lApplication Switching lPackaging specifications Code Packing C7 G Tube C7 Tube* - (Blank) Bulk* *Package dimensions are different lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) Parameter Symbol .

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R6020KNX   Nch 600V 20A Power MOSFET    Datasheet lOutline VDSS 600V   RDS(on)(Max.) 0.196Ω ID ±20A TO-220FM PD 68W          lFeatures 1) Low on-resistance 2) Ultra Fast switching 3) Parallel use is easy 4) Pb-free plating ; RoHS compliant lInner circuit lApplication Switching lPackaging specifications Code Packing C7 G Tube C7 Tube* - (Blank) Bulk* *Package dimensions are different lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) Parameter Symbol Value Unit Drain - Source voltage Continuous drain current Pulsed drain current VDSS ID*1 IDP*2 600 V ±20 A ±60 A Gate - Source voltage Static AC (f>1Hz) VGSS ±20 V ±30 V Avalanche current, single pulse Avalanche energy, single pulse Power dissipation (Tc = 25°C) IAS EAS*3 PD 3.4 A 418 mJ 68 W Junction temperature Tj 150 ℃ Operating junction and storage temperature range Tstg -55 to +150 ℃                                                                                          www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. 1/12 20190603 - Rev.002     R6020KNX            lThermal resistance Parameter Thermal resistance, junction - case Thermal resistance, junction - ambient Soldering temperature, wavesoldering for 10s                 Datasheet                      Symbol RthJC*4 RthJA Tsold Values Unit Min. Typ. Max. - - 1.8 ℃/W - - 70 ℃/W - - 265 ℃ lElectrical characteristics (Ta = 25°C) Parameter Symbol Conditions Drain - Source breakdown voltage Zero gate voltage drain current Gate - Source leakage current Gate threshold voltage Static drain - source on - state resistance Gate resistance V(BR)DSS VGS = 0V, ID = 1mA VDS = 600V, VGS = 0V IDSS Tj = 25°C Tj = 125°C IGSS VGS = ±20V, VDS = 0V VGS(th) VDS = 10V, ID = 1mA VGS = 10V, ID = 9.5A RDS(on)*5 Tj = 25°C Tj = 125°C RG f = 1MHz, open drain Values Unit Min. Typ. Max. 600 - - V       - - 100 μA - - 1000 - - ±100 nA 3 - 5 V       - 0.170 0.196 Ω - 0.360 - - 2.3 - Ω                                                                                           www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. 2/12 20190603 - Rev.002 R6020KNX                            Datasheet lElectrical characteristics (Ta = 25°C) Parameter Symbol Conditions Values Unit Min. Typ. Max. Forward Transfer Admittance |Yfs|*5 VDS = 10V, ID = 10A 5 10 - S Input capacitance Output capacitance Reverse transfer capacitance Turn - on delay time Rise time Turn - off delay time Fall time Ciss VGS = 0V - 1550 - Coss VDS = 25V - 1350 - pF Crss f = 1MHz - 55 - td(on)*5 VDD ⋍ 300V, VGS = 10V - 30 - tr*5 td(off)*5 ID = 10A RL ⋍ 30Ω - 30 ns - 55 - tf*5 RG = 10Ω - 10 - lGate charge characteristics (Ta = 25°C) Parameter Symbol Conditions Total gate charge Gate - Source charge Gate - Drain charge Gate plateau voltage Qg*5 Qgs*5 Qgd*5 V(plateau) VDD ⋍ 300V ID = 20A VGS = 10V VDD ⋍ 300V, ID = 20A Values Unit Min. Typ. Max. - 40 - - 12 - nC - 15 - - 6.4 - V *1 Limited only by maximum channel temperature allowed. *2 Pw ≤ 10μs, Duty cycle ≤ 1% *3 L≒70mH, VDD=50V, RG=25Ω, STARTING Tj=25℃ *4 TC=25℃ *5 Pulsed                                                                                           www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. 3/12 20190603 - Rev.002 R6020KNX                 Datasheet lBody diode electrical characteristics (Source-Drain) (Ta = 25°C) Parameter Symbol Conditions Values Unit Min. Typ. Max. Continuous forward current Pulse forward current IS*1 TC = 25℃ ISP*2 - - 20 A - - 60 A Forward voltage VSD*5 VGS = 0V, IS = 20A - - 1.5 V Reverse recovery time Reverse recovery charge Peak reverse recovery current trr*5 Qrr*5 IS = 20A di/dt = 100A/μs Irrm*5 - 500 - ns - 7.5 - μC - 30 - A lTypical transient thermal characteristics Symbol Value Unit Rth1 0.118 Rth2 0.722 K/W Rth3 2.15 Symbol Cth1 Cth2 Cth3 Value 0.00216 0.0346 0.491       Unit Ws/K                                                                                            www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. 4/12 20190603 - Rev.002 R6020KNX        lElectrical characteristic curves Fig.1 Power Dissipation Derating Curve          Datasheet Fig.2 Drain Current Derating Curve Fig.3 Normal.


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