Document
R6020KNX
Nch 600V 20A Power MOSFET
Datasheet
lOutline
VDSS
600V
RDS(on)(Max.)
0.196Ω
ID
±20A
TO-220FM
PD
68W
lFeatures
1) Low on-resistance 2) Ultra Fast switching 3) Parallel use is easy 4) Pb-free plating ; RoHS compliant
lInner circuit
lApplication Switching
lPackaging specifications
Code
Packing
C7 G
Tube
C7
Tube*
- (Blank)
Bulk*
*Package dimensions are different
lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified)
Parameter
Symbol
Value
Unit
Drain - Source voltage Continuous drain current Pulsed drain current
VDSS ID*1 IDP*2
600
V
±20
A
±60
A
Gate - Source voltage
Static
AC (f>1Hz)
VGSS
±20
V
±30
V
Avalanche current, single pulse Avalanche energy, single pulse Power dissipation (Tc = 25°C)
IAS EAS*3 PD
3.4
A
418
mJ
68
W
Junction temperature
Tj
150
℃
Operating junction and storage temperature range
Tstg
-55 to +150
℃
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© 2019 ROHM Co., Ltd. All rights reserved.
1/12
20190603 - Rev.002
R6020KNX
lThermal resistance
Parameter
Thermal resistance, junction - case Thermal resistance, junction - ambient Soldering temperature, wavesoldering for 10s
Datasheet
Symbol
RthJC*4 RthJA Tsold
Values Unit
Min. Typ. Max.
-
- 1.8 ℃/W
-
- 70 ℃/W
-
- 265 ℃
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Drain - Source breakdown voltage
Zero gate voltage drain current
Gate - Source leakage current Gate threshold voltage
Static drain - source on - state resistance
Gate resistance
V(BR)DSS VGS = 0V, ID = 1mA
VDS = 600V, VGS = 0V IDSS Tj = 25°C
Tj = 125°C IGSS VGS = ±20V, VDS = 0V VGS(th) VDS = 10V, ID = 1mA
VGS = 10V, ID = 9.5A RDS(on)*5 Tj = 25°C
Tj = 125°C RG f = 1MHz, open drain
Values Unit
Min. Typ. Max.
600 -
-
V
-
- 100 μA
-
- 1000
-
- ±100 nA
3
-
5
V
- 0.170 0.196 Ω
- 0.360 -
- 2.3 - Ω
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© 2019 ROHM Co., Ltd. All rights reserved.
2/12
20190603 - Rev.002
R6020KNX
Datasheet
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Values Unit
Min. Typ. Max.
Forward Transfer Admittance
|Yfs|*5 VDS = 10V, ID = 10A
5 10 -
S
Input capacitance Output capacitance Reverse transfer capacitance Turn - on delay time Rise time Turn - off delay time Fall time
Ciss VGS = 0V
- 1550 -
Coss VDS = 25V
- 1350 - pF
Crss f = 1MHz
- 55 -
td(on)*5 VDD ⋍ 300V, VGS = 10V
-
30
-
tr*5 td(off)*5
ID = 10A RL ⋍ 30Ω
- 30 ns
- 55 -
tf*5 RG = 10Ω
- 10 -
lGate charge characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Total gate charge Gate - Source charge Gate - Drain charge Gate plateau voltage
Qg*5 Qgs*5 Qgd*5 V(plateau)
VDD ⋍ 300V ID = 20A VGS = 10V VDD ⋍ 300V, ID = 20A
Values Unit
Min. Typ. Max.
- 40 -
- 12 - nC
- 15 -
- 6.4 -
V
*1 Limited only by maximum channel temperature allowed. *2 Pw ≤ 10μs, Duty cycle ≤ 1% *3 L≒70mH, VDD=50V, RG=25Ω, STARTING Tj=25℃ *4 TC=25℃ *5 Pulsed
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© 2019 ROHM Co., Ltd. All rights reserved.
3/12
20190603 - Rev.002
R6020KNX
Datasheet
lBody diode electrical characteristics (Source-Drain) (Ta = 25°C)
Parameter
Symbol
Conditions
Values Unit
Min. Typ. Max.
Continuous forward current
Pulse forward current
IS*1 TC = 25℃
ISP*2
-
-
20
A
-
-
60
A
Forward voltage
VSD*5 VGS = 0V, IS = 20A
-
-
1.5
V
Reverse recovery time Reverse recovery charge Peak reverse recovery current
trr*5
Qrr*5
IS = 20A di/dt = 100A/μs
Irrm*5
- 500 -
ns
-
7.5
-
μC
-
30
-
A
lTypical transient thermal characteristics
Symbol
Value
Unit
Rth1
0.118
Rth2
0.722
K/W
Rth3
2.15
Symbol Cth1 Cth2 Cth3
Value 0.00216 0.0346 0.491
Unit
Ws/K
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© 2019 ROHM Co., Ltd. All rights reserved.
4/12
20190603 - Rev.002
R6020KNX
lElectrical characteristic curves
Fig.1 Power Dissipation Derating Curve
Datasheet
Fig.2 Drain Current Derating Curve
Fig.3 Normal.