R6024ENZ

R6024ENZ Nch 600V 24A Power MOSFET Data Sheet VDSS RDS(on) (Max.) ID PD 600V 0.165W 24A 120W lOutline TO-3PF (1) (2)(3) lFeatures 1) Low on-resistance. lInner circuit 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 20V. 4) Drive circuits can be simple. 5) Parallel use is easy. (1) Gate (2) Drain (3) Source *1 BODY DIODE 6) Pb-free lead plating ; RoHS compliant lPackaging specifications Packaging Tube Reel size (mm) - lApplication Switching Power Supply Tape width (mm) - Type Basic ordering unit (pcs) 360 Taping code C8 Marking R6024ENZ lAbsolute maximum ratings (Ta = 25°C) Parameter Drain - Source voltage Continuous drain current Tc = 25°C Tc = 100°C Pulsed drain current Gate - Source voltage Avalanche energy, single pulse Avalanche energy, repetitive Avalanche current, repetitive Power dissipation (Tc = 25°C) Junction temperature Range of storage temperature Reverse diode dv/dt Symbol VDSS ID *1 ID *1 ID,pulse *2 VGSS EAS *3 EAR *3 IAR PD Tj Tstg dv/dt *4 Value 600 24 13.0 72 20 497 0.75 4.1 120 150 -55 to +150 15 Unit V A A A V mJ mJ A W °C °C V/ns www.rohm.com © 2014 ROHM Co., Ltd. All rights reserved. 1/12 2014.03 - Rev.B R6024ENZ lAbsolute maximum ratings Parameter Drain - Source voltage slope Data Sheet Symbol Conditions dv/dt VDS = 480V Tj = 25°C Values Unit 50 V/ns lThermal resistance Parameter Thermal resistance, junction - case Thermal resistance, junction - ambient Soldering temperat...