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R6030ENX Dataheets PDF



Part Number R6030ENX
Manufacturers INCHANGE
Logo INCHANGE
Description N-Channel MOSFET
Datasheet R6030ENX DatasheetR6030ENX Datasheet (PDF)

isc N-Channel MOSFET Transistor R6030ENX FEATURES ·Drain Current –ID= 30A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 130mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Sour.

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