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R6504ENJ
N-Channel MOSFET
Description
isc N-Channel MOSFET
Transistor
R6504ENJ FEATURES ·Drain Current –ID= 4.0A@ TC=25℃ ·Drain Source Voltage- : VDSS=650V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.05Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mode power supplies and gener...
INCHANGE
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