R6030KNX

R6030KNX 　　Nch 600V 30A Power MOSFET 　　 Datasheet lOutline VDSS 600V 　 RDS(on)(Max.) 0.130Ω ID ±30A TO-220FM PD 86W 　 　　　　　　 lFeatures 1) Low on-resistance 2) Ultra fast switching 3) Parallel use is easy 4) Pb-free plating ; RoHS compliant lInner circuit lApplication Switching lPackaging specifications Code Packing C7 G Tube C7 Tube* - (Blank) Bulk* *Package dimensions are different lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) Parameter Symbol Value Unit Drain - Source voltage Continuous drain current Pulsed drain current VDSS ID*1 IDP*2 600 V ±30 A ±80 A Gate - Source voltage static AC(f＞1Hz) VGSS ±20 V ±30 V Avalanche current, single pulse Avalanche energy, single pulse Power dissipation (Tc = 25°C) IAS EAS*3 PD 5.2 A 636 mJ 86 W Junction temperature Tj 150 ℃ Operating junction and storage temperature range Tstg -55 to +150 ℃ 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　　 　 　 　 　 　 　 　 　 　 　 www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. 1/12 20190603 - Rev.003 　 　 R6030KNX 　 　 　 　　 　 lThermal resistance Parameter Thermal resistance, junction - case Thermal resistance, junction - ambient Soldering temperature, wavesoldering for 10s 　 　 　 　 　 　 　 　 Datasheet 　 　 　　　　　　　　　　　　　　　　 Symbol RthJC*4 RthJA Tsold Values Unit Min. Typ. Max. - - 1.5 ℃/W - - 70 ℃/W - - 265 ℃ lElectrical characteristics (Ta = 25°C) Parameter Symbol Conditions Drai...