isc N-Channel MOSFET Transistor
R6509ENJ
FEATURES ·Drain Current –ID= 9A@ TC=25℃ ·Drain Source Voltage-
: VDSS=650V(Mi...
isc N-Channel MOSFET
Transistor
R6509ENJ
FEATURES ·Drain Current –ID= 9A@ TC=25℃ ·Drain Source Voltage-
: VDSS=650V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 585mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
DESCRIPTION ·Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage
650
V
VGS
Gate-Source Voltage-Continuous
±20
V
ID
Drain Current-Continuous
9
A
IDM
Drain Current-Single Pluse
27
A
PD
Total Dissipation @TC=25℃
94
W
TJ
Max. Operating Junction Temperature -55~150 ℃
Tstg
Storage Temperature
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT
1.3
℃/W
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isc N-Channel MOSFET
Transistor
R6509ENJ
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID= 1mA
VGS(th) Gate Threshold Voltage
VDS= VGS; ID=230uA
RDS(on) Drain-Source On-Resistance
VGS= 10V; ID=2.8A
IGSS
Gate-Body Leakage Current
IDSS
Zero Gate Voltage Drain Current
VSD
Forward On-Voltage
VGS= ±20V;VDS= 0
VDS= 650V; VGS= 0 VDS= 650V; VGS= 0@TJ=125℃
IS= 9A; VGS= 0
MIN MAX UNIT
650
V
2
4
V
585
mΩ
±100 nA
100 1000
μA
1.5
V
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