Power MOSFET
R6504KNJ
Nch 650V 4A Power MOSFET
VDSS RDS(on)(Max.)
ID PD
650V 1.050Ω ±4.0A
58W
lFeatures
1) Low on-resistance 2) ...
Description
R6504KNJ
Nch 650V 4A Power MOSFET
VDSS RDS(on)(Max.)
ID PD
650V 1.050Ω ±4.0A
58W
lFeatures
1) Low on-resistance 2) Ultra fast switching speed 3) Parallel use is easy 4) Pb-free plating ; RoHS compliant
lOutline
LPT(S)
lInner circuit
Datasheet
lApplication Switching
lPackaging specifications
Packing
Embossed Tape
Packing code
TL
Marking
R6504KNJ
Basic ordering unit (pcs)
1000
lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified)
Parameter
Symbol
Value
Unit
Drain - Source voltage Continuous drain current (Tc = 25°C) Pulsed drain current
VDSS ID*1 IDP*2
650
V
±4.0
A
±12
A
Gate - Source voltage
Static
AC (f>1Hz)
VGSS
±20
V
±30
V
Avalanche current, single pulse
IAS
0.8
A
Avalanche energy, single pulse
EAS*3
34.8
mJ
Power dissipation (Tc = 25°C)
PD
58
W
Junction temperature
Tj
150
℃
Operating junction and storage temperature range
Tstg
-55 to +150
℃
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1/11
20171004 - Rev.002
R6504KNJ
lThermal resistance
Parameter
Thermal resistance, junction - case Thermal resistance, junction - ambient Soldering temperature, wavesoldering for 10s
Datasheet
Symbol
RthJC*4 RthJA*5 Tsold
Values Unit
Min. Typ. Max.
-
- 2.2 ℃/W
-
- 80 ℃/W
-
- 265 ℃
lElectrical characteristics (Ta = 25°C)
Parameter
S...
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