Power MOSFET
R6509ENX
Nch 650V 9A Power MOSFET
Datasheet
lOutline
VDSS
650V
RDS(on)(Max.)
0.585Ω
ID
±9A
TO-220FM
PD...
Description
R6509ENX
Nch 650V 9A Power MOSFET
Datasheet
lOutline
VDSS
650V
RDS(on)(Max.)
0.585Ω
ID
±9A
TO-220FM
PD
48W
lFeatures
1) Low on-resistance 2) Fast switching 3) Parallel use is easy 4) Pb-free plating ; RoHS compliant
lInner circuit
lApplication Switching
lPackaging specifications
Code
Packing
C7 G
Tube
C7
Tube*
- (Blank)
Bulk*
*Package dimensions are different
lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified)
Parameter
Symbol
Value
Unit
Drain - Source voltage Continuous drain current Pulsed drain current
VDSS ID*1 IDP*2
650
V
±9
A
±27
A
Gate - Source voltage
static
AC(f>1Hz)
VGSS
±20
V
±30
V
Avalanche current, single pulse Avalanche energy, single pulse Power dissipation (Tc = 25°C)
IAS EAS*3 PD
1.4
A
158
mJ
48
W
Junction temperature
Tj
150
℃
Operating junction and storage temperature range
Tstg
-55 to +150
℃
www.rohm.com
© 2019 ROHM Co., Ltd. All rights reserved.
1/12
20200203 - Rev.004
R6509ENX
lThermal resistance
Parameter
Thermal resistance, junction - case Thermal resistance, junction - ambient Soldering temperature, wavesoldering for 10s
Datasheet
Symbol
RthJC*4 RthJA Tsold
Values Unit
Min. Typ. Max.
-
- 2.6 ℃/W
-
- 70 ℃/W
-
- 265 ℃
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Drain - Sourc...
Similar Datasheet